M. Metz

Monocrystalline thin-film waferlevel encapsulation of microsystems using Porous Silicon

J. Burghartz, M. Ahles, K. Kraft, 2011 .

Novel Technology for Capacitive Pressure Sensors with Monocrystalline Silicon Membranes

H. Seidel, H. Benzel, H. Weber, 2009, 2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems.

High mobility Si/SiGe strained channel MOS transistors with HfO/sub 2//TiN gate stack

S. Datta, J. Kavalieros, R. Chau, 2003, IEEE International Electron Devices Meeting 2003.

BTI reliability of 45 nm high-K + metal-gate process technology

G. Dewey, J. Kavalieros, M. Metz, 2008, 2008 IEEE International Reliability Physics Symposium.

Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

G. Dewey, B. Chu-Kung, J. Boardman, 2011, 2011 International Electron Devices Meeting.

Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

G. Dewey, B. Chu-Kung, J. Fastenau, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering

G. Dewey, J. Kavalieros, M. Metz, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

High-/spl kappa//metal-gate stack and its MOSFET characteristics

J. Kavalieros, M. Metz, R. Chau, 2004, IEEE Electron Device Letters.

300mm Heterogeneous 3D Integration of Record Performance Layer Transfer Germanium PMOS with Silicon NMOS for Low Power High Performance Logic Applications

G. Dewey, B. Chu-Kung, J. Kavalieros, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

G. Dewey, B. Chu-Kung, J. Boardman, 2011, 2011 International Electron Devices Meeting.