Yanjun Ma

DEPOSITION OF HIGHLY CROSSLINKED FLUORINATED AMORPHOUS CARBON FILM AND STRUCTURAL EVOLUTION DURING THERMAL ANNEALING

D. Tweet, T. Nguyen, Hongning Yang, 1998 .

Interface control in the chemical vapor deposition of titanium dioxide on silicon(100)

J. W. Rogers, V. K. Medvedev, Yanjun Ma, 2000 .

Ultrathin Gate Oxides with Shallow Nitrogen Implants as Effective Barriers to Boron Diffusion

S. Hsu, Yanjun Ma, Y. Ono, 1999 .

Thermal stability and structural evolution of low-K Fluorinated amorphous carbon during thermal annealing

D. Tweet, S. Hsu, David R. Evans, 1998 .

Deposition and Treatment of TiO 2 as an Alternative for Ultrathin Gate Dielectrics

S. Hsu, Yanjun Ma, Y. Ono, 1999 .

Zr Oxide Based Gate Dielectrics with Equivalent SiO 2 Thickness of Less than 1.0 nm and Device Integration with Pt Gate Electrode

Yanjun Ma, Y. Ono, 2000 .