F. Amin

Direct extraction and numerical simulation of the base and collector delay times in double heterojunction bipolar transistors

A. P. Knights, Ali A. Rezazadeh, Ata Khalid, 1999 .

Thermoelectric properties of fine grained (75% Sb2Te3-25% Bi2Te3)p-type and (90% Bi2Te3-5% Sb2Te3-5% Sb2Se3)n-type alloys

F. Amin, A. Hassib, A. S. Al-Ghaffari, 1992 .

Bias and temperature stress reliability of InGaP/GaAs HBTs

A. Rezazadeh, S. Bashar, L. Cattani, 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).

Reliability investigation of InGaP/GaAs HBTs under current and temperature stress

Juin J. Liou, Fausto Fantini, Ali A. Rezazadeh, 1999 .

Non-alloyed ohmic contacts using MOCVD grown n+-InxGa1−xAs on n-GaAs

A. Rezazadeh, S. Bland, F. Amin, 1999 .

Hot pressing of isothermally solidified Ge-Si alloys

Z. H. Dughaish, F. Amin, A. Hassib, 1985 .

Preparation of heavily dopedn-type Ge-Si thermoelectric alloys

Z. H. Dughaish, F. Amin, M. Issa, 1989 .

Parallel Planar-Processed and Ion-Induced Electrically Isolated Future Generation AlGaN/GaN HEMT for Gas Sensing and Opto-Telecommunication Applications

Z. Hussain, F. Amin, L. Khan, 2013 .