B. Lye

GaInP/AlGaAs/GaInP double heterojunction bipolar transistors with zero conduction band spike at the collector

C. Button, P. Houston, B. Lye, 1998 .

Electrical and optical characterisation of heavily doped GaAs:C bases of heterojunction bipolar transistors

J. David, C. Button, P. Houston, 1998 .

Electron mobility enhancement in heavily doped GaAs:C heterojunction bipolar transistors

C. Button, P. Houston, B. Lye, 1996 .

Wide bandgap collectors in GaInP/GaAs heterojunction bipolar transistors with increased breakdown voltage

J. David, C. Button, B. Lye, 1998, Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors.

Breakdown behaviour in wide bandgap collector GaInP/GaAs double heterojunction bipolar transistors

J. David, C. Button, P. Houston, 1997, IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat..