Seongheum Choi

发表

Observation of heterostructure epitaxy of Pt-doped Ni-monosilicide on Si(001)

Hyoungsub Kim, Ilgyou Shin, Eunha Lee, 2019, Microelectronic Engineering.

Chemically Homogeneous and Thermally Robust Ni1-xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition.

Chulsung Kim, Hyoungsub Kim, Eunha Lee, 2017, ACS applied materials & interfaces.

Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation

Hyoungsub Kim, Ilgyou Shin, Tae-Gon Kim, 2019, Journal of Alloys and Compounds.

Lamellar-structured Ni-silicide film formed by eutectic solidification

Hyoungsub Kim, Eunha Lee, Sungho Lee, 2019, Journal of Alloys and Compounds.

Atomic layer deposition of Al2O3 on MoS2, WS2, WSe2, and h-BN: surface coverage and adsorption energy

Hyoungsub Kim, Seong-Jun Jeong, Yunseok Kim, 2017 .

Defect-free erbium silicide formation using an ultrathin Ni interlayer.

Hyoungsub Kim, Hoo-Jeong Lee, Y. Kang, 2014, ACS applied materials & interfaces.

Silicide formation process of Er films with Ta and TaN capping layers.

Seok-Hee Lee, Hyoungsub Kim, Hoo-Jeong Lee, 2013, ACS applied materials & interfaces.

Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

Hyoungsub Kim, Eunjung Ko, D. Ko, 2016 .

Doping and strain effects on the microstructure of erbium silicide on Si:P

C. Q. Lee, Hyoungsub Kim, Cheol‐Woong Yang, 2017 .

Characteristics of an Amorphous Carbon Layer as a Diffusion Barrier for an Advanced Copper Interconnect.

S. Pae, Hyoungsub Kim, Changmin Lee, 2019, ACS applied materials & interfaces.

Formation of Er‐germanosilicide films on strained Si1−xGex with different Ge contents

Hyoungsub Kim, Seongheum Choi, Juyun Choi, 2015 .

Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition

Hyoungsub Kim, Y. Kang, K. Jeong, 2017, Scientific Reports.