T. Tsutsumi

Improvement of thermal stability of nickel silicide using N2ion implantation prior to nickel film deposition

K. Maekawa, K. Asai, T. Okudaira, 2006, 2006 International Workshop on Junction Technology.

Anomalous Nickel Silicide Encroachment in n-Channel Metal–Oxide–Semiconductor Field-Effect Transitors on Si(110) Substrates and Its Suppression by Si+ Ion-Implantation Technique

K. Asai, T. Okudaira, T. Yamaguchi, 2009 .

Mechanism of nickel disilicide growth caused by RIE plasma-induced damage on silicon substrate

K. Asai, S. Sakamori, T. Okudaira, 2008, Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08).

Characterizations of NiSi2-Whisker Defects in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with $\langle 110\rangle$ Channel on Si(100)

K. Asai, T. Okudaira, T. Yamaguchi, 2010 .

Suppression of Anomalous Gate Edge Leakage Current by Control of Ni Silicidation Region using Si Ion Implantation Technique

K. Asai, T. Okudaira, J. Tsuchimoto, 2006, 2006 International Electron Devices Meeting.

Anomalous Gate-Edge Leakage Current in nMOSFETs Caused by Encroached Growth of Nickel Silicide and Its Suppression by Confinement of Silicidation Region Using Advanced $\hbox{Si}^{+}$ Ion-Implantation Technique

K. Asai, T. Okudaira, J. Tsuchimoto, 2009, IEEE Transactions on Electron Devices.

A Novel Low Leakage-Current Ni SALICIDE Process in nMOSFETs on Si(110) Substrate

K. Asai, H. Oda, T. Okudaira, 2007, 2007 IEEE International Electron Devices Meeting.

Characterizations of NiSi2-Whisker Defects in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with <110> Channel on Si(100)

K. Asai, T. Okudaira, T. Yamaguchi, 2010 .

The relation between photoluminescence properties and gas pressure with [0001] InGaN single quantum well systems

Y. Kawakami, R. Micheletto, G. Alfieri, 2017 .

Electronic properties of substitutional impurities in InGaN monolayer quantum wells

R. Micheletto, G. Alfieri, T. Tsutsumi, 2015 .