K. Kawamura

发表

Dependence of CoSi2 Sheet Resistance on Cobalt Thickness for Gate Lengths of 50 nm or Less

T. Saiki, K. Kawamura, R. Nakamura, 2006 .

Atomic Displacements at Surface of Si-Wafer(111)

J. Harada, Y. Kashihara, K. Kawamura, 1987 .

Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition

A. Nakajima, Y. Sugita, K. Kawamura, 1996 .

MICROSTRUCTURE AND OPTICAL ABSORPTION PROPERTIES OF SI NANOCRYSTALS FABRICATED WITH LOW-PRESSURE CHEMICAL-VAPOR DEPOSITION

Naoki Yokoyama, Yoshihiro Sugita, Anri Nakajima, 1996 .

Dependence of Sheet Resistance of CoSi2 with Gate Length of 30 nm on Thickness of Titanium Nitride Capping Layer in Co-Salicide Process

S. Inagaki, M. Kase, T. Saiki, 2007 .

Segregation Coefficient of Boron and Arsenic at Polycrystalline Silicon / SiO2 Interface

Kunihiro Suzuki, Y. Yamashita, K. Kawamura, 1993 .

Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflections.

K. Tsuda, M. Terauchi, K. Kawamura, 2007, Journal of electron microscopy.

Detection of characteristic signals from as-doped (<1 at.%) regions of silicon by transmission electron microscopy and convergent-beam electron diffraction.

K. Tsuda, M. Terauchi, K. Kawamura, 2003, Journal of Electron Microscopy.