Ho-Young Cha

发表

Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors

Jae-Gil Lee, Chun-Hyung Cho, Ho-Young Cha, 2011, IEICE Trans. Electron..

Stick-slip algorithm in a tangential contact force model for multi-body system dynamics

Ho-Young Cha, Juhwan Choi, Han Sik Ryu, 2011 .

An efficient Generalized Geometry Contact algorithm including modal reduction flexible bodies

Ho-Young Cha, Sungsoo Rhim, Juhwan Choi, 2017 .

Harsh-Environment Solid-State Gamma Detector for Down-hole Gas and Oil Exploration

Ho-Young Cha, Jim Williams, David O'Connor, 2007 .

Effects of PECVD SiO₂ Gate Dielectric Thickness on Recessed AlGaN/GaN MOS-HFETs

Won-Ho Jang, Chun-Hyung Cho, Ho-Young Cha, 2018 .

Characterization of Stiffness Coefficients of Silicon Versus Temperature using "Poisson's Rati" Measurements

Chun-Hyung Cho, Ho-Young Cha, Hyuk-Kee Sung, 2016 .

A Sensitivity-controllable Shear-stress Sensor with 2 Sets of +45/-45 Degree Semiconductor Resistor-sensor Pair

Chun-Hyung Cho, Ho-Young Cha, Hyuk-Kee Sung, 2018 .

4H-SiC Avalanche Photodiodes for 280 nm UV Detection

Chun-Hyung Cho, Ho-Young Cha, Hyungtak Kim, 2010, IEICE Trans. Electron..

Special issue on SoC and AI processors

Minjae Lee, Ho-Young Cha, Ji-Hoon Kim, 2020 .

Gallium Nitride PIN Avalanche Photodiode with Double-step Mesa Structure

Ho-Young Cha, Hyungsik Shin, Thu Thi Thuy Pham, 2018 .

Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions

Ho-Young Cha, Hyungtak Kim, Hyuk-Kee Sung, 2019, Sensors.

Thermal consideration in LED array design for LCD backlight unit applications

Ho-Young Cha, Bong-Ryeol Park, 2010, IEICE Electron. Express.

Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon

Chun-Hyung Cho, Ho-Young Cha, Ginkyu Choi, 2010, IEICE Trans. Electron..

IoT Security Issues and Light Weight Block Cipher

Ho-Young Cha, Seo Weon Heo, Hyungtak Kim, 2019, 2019 International Conference on Artificial Intelligence in Information and Communication (ICAIIC).

Development of Paper Feeding Speed Control System Using Co-Simulation Tool

Ho-Young Cha, Sungsoo Rhim, Soon-Geul Lee, 2007 .

Stress-Sensors with High-Sensitivity Using the Combined Meandering-Patterns

Chun-Hyung Cho, Ho-Young Cha, 2015 .

Parasitic Resistance Effects on Mobility Extraction of Normally-off AlGaN/GaN Gate-recessed MISHFETs

Geunho Cho, Ho-Young Cha, Hyungtak Kim, 2018 .

Gain Parameter Determination for the Feeding Speed and Skew Controller of Media Transport System using Optimization Technique

Ho-Young Cha, Soon-Geul Lee, Min-Soo Kim, 2009 .

Highly-sensitive Hydrostatic Semiconductor Pressure Sensors

Chun-Hyung Cho, Ho-Young Cha, Hyuk-Kee Sung, 2019 .

Diode quenching for Geiger mode avalanche photodiode

Ho-Young Cha, Hyungtak Kim, Hyuk-Kee Sung, 2018, IEICE Electron. Express.

Errors in Pi-Coefficients Due to the Strain Effects in Resistor Stress Sensor on (001) Silicon

Chun-Hyung Cho, Ho-Young Cha, H. Cha, 2011, IEICE Trans. Electron..

A 5 to 27 GHz MMIC power amplifier

Kye-Ik Jeon, Ho-Young Cha, Dong Wook Kim, 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

High-Quality ICPCVD $\hbox{SiO}_{2}$ for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs

Jae-Gil Lee, Ho-Young Cha, Kwang-Seok Seo, 2013, IEEE Electron Device Letters.

Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs

Lester F. Eastman, Ho-Young Cha, Michael G. Spencer, 2003 .

High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${\rm SiN}_{x}$ /RF-Sputtered-${\rm HfO}_{2}$

Ho-Young Cha, Kwang-Seok Seo, Ogyun Seok, 2014, IEEE Electron Device Letters.

Improvement of $V_{\rm th}$ Instability in Normally-Off GaN MIS-HEMTs Employing ${\rm PEALD}\hbox{-}{\rm SiN}_{\rm x}$ as an Interfacial Layer

Ho-Young Cha, Kwang-Seok Seo, Woojin Choi, 2014, IEEE Electron Device Letters.

The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate

Ho-Young Cha, M. Pophristic, B. Peres, 2006, IEEE Transactions on Electron Devices.

Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors

Jae-Gil Lee, Ho-Young Cha, Hyungtak Kim, 2014 .

DC Characteristics of Wide Bandgap Semiconductor Field Effect Transistors at Cryogenic Temperatures

Ho-Young Cha, Jongtae Lim, Hyungtak Kim, 2010 .

Surface Functionalized Graphene Biosensor on Sapphire for Cancer Cell Detection.

Ho-Young Cha, Sandip Tiwari, Jo-Won Lee, 2016, Journal of nanoscience and nanotechnology.

Simulation study on breakdown behavior of field-plate SiC MESFETs

Ho-Young Cha, Y.C. Choi, L.F. Eastman, 2004, Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004..

Impact Ionization Coefficients in 4H-SiC

Ho-Young Cha, C.M. Johnson, B. K. Ng, 2008, IEEE Transactions on Electron Devices.

Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors

Ho-Young Cha, Michael G. Spencer, Goutam Koley, 2006 .

Thermal instability of copper gate AlGaN/GaN HEMT on Si substrate

Ho-Young Cha, Kwang-Seok Seo, K. Seo, 2010 .

Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs

Ho-Young Cha, Kwang-Seok Seo, Woojin Choi, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Degradation characteristics of AlGaN-GaN high electron mobility transistors

Lester F. Eastman, Ho-Young Cha, James R. Shealy, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

State-of-the-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates

Jae-Gil Lee, Ho-Young Cha, Kwang-Seok Seo, 2012 .

Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs

Lester F. Eastman, Ho-Young Cha, Michael G. Spencer, 2004 .

High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance

Lester F. Eastman, Ho-Young Cha, Milan Pophristic, 2007 .

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Won-Ho Jang, Chun-Hyung Cho, Ho-Young Cha, 2017, IEEE Electron Device Letters.