S. Ratanaphanyarat

发表

Oxygen implantation to suppress parasitic bipolar action in CMOS

S. Wong, C. Drowley, S. Ratanaphanyarat, 1991 .

A self-aligned nitrogen implantation process (SNIP) to minimize field oxide thinning effect in submicrometer LOCOS

J. B. Kuang, S. Wong, S. Ratanaphanyarat, 1990 .

A high performance epitaxial SiGe-base ECL BiCMOS technology

J.M.C. Stork, J. D. Cressler, S. Ratanaphanyarat, 1992, 1992 International Technical Digest on Electron Devices Meeting.

Low frequency and microwave characterization of submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular‐beam epitaxy

J. B. Kuang, P. Tasker, L. Eastman, 1989 .