J. Kątcki

发表

Very low Schottky barrier to n-type silicon with PtEr-stack silicide

E. Dubois, Xiaohui Tang, N. Reckinger, 2003 .

Formation of platinum-based silicide contacts: Kinetics, stoichiometry, and current drive capabilities

E. Dubois, X. Wallart, G. Larrieu, 2003 .

Transmission electron microscopy of In(Ga)As quantum dot structures

A. Fiore, R. Cingolani, A. Passaseo, 2003 .

Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications

A. Fiore, L. Lazzarini, L. Nasi, 2002 .

Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

E. Dubois, X. Wallart, G. Larrieu, 2007 .

The effect of Ni:Si ratio on microstructural properties of Ni/Si ohmic contacts to SiC

A. Czerwinski, A. Piotrowska, M. Myśliwiec, 2016 .

Electron microscopy study of advanced heterostructures for optoelectronics

M. Bugajski, J. Muszalski, A. Fiore, 2003 .

TEM study of PtSi contact layers for low Schottky barrier MOSFETs

E. Dubois, G. Larrieu, N. Breil, 2006 .

Transmission electron microscopy analysis of silicides used in ALSB-SOI MOSFET structures

E. Dubois, J. Penaud, G. Larrieu, 2003 .

Depth measurements of etch‐pits in GaN with shape reconstruction from SEM images

E. Iacob, M. Wzorek, J. Ratajczak, 2010, Journal of microscopy.

MBE growth of planar microcavities with distributed Bragg reflectors

M. Bugajski, K. Regiński, J. Muszalski, 2000 .

Nanostructure formation by high temperature–pressure treatment of silicon implanted with hydrogen/helium

B. Surma, J. Jagielski, M. Wzorek, 2004 .

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

E. Dubois, P. V. van Aken, N. Reckinger, 2010, Journal of microscopy.

New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation

P. Perlin, R. Czernecki, M. Leszczyński, 2009, Journal of microscopy.

Advanced GaSb/InGaAsSb/AlGaAsSb 2-2.4µm Photovoltaic Detectors

E. Papis, E. Kamińska, A. Piotrowska, 1999 .

Effect of Annealing At High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen

J. Jun, J. Ratajczak, J. Kątcki, 2002 .

Transmission electron microscopy of hard ceramic superlattices applied in silicon micro-electro-mechanical systems

J. Ratajczak, J. Kątcki, K. Studzińska, 2003 .

Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/Ge/SiO2/Si structure

E. Dubois, P. Aken, V. Srot, 2008 .

LPE growth and characterisation of GaInAsSb and GaAlAsSb quaternary layers on (100) GaSb substrates

E. Papis, A. Piotrowska, A. Wawro, 2004 .

On the influence of point defects in the LOCOS process

H. Bartsch, J. Kątcki, R. Gleichmann, 1987 .

Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

E. P. Neustroev, A. Romano-Rodríguez, I. Antonova, 2001 .

Defect structure in self‐implanted silicon annealed under enhanced hydrostatic pressure – electron microscopy study

B. Surma, M. Wzorek, J. Ratajczak, 2007 .

Hydrostatic pressure effect on dislocation evolution in self-implanted Si investigated by electron microscopy methods

M. Wzorek, J. Ratajczak, A. Misiuk, 2007 .

Impact of fast-neutron irradiation on the silicon p–n junction leakage and role of the diffusion reverse current

E. Simoen, C. Claeys, A. Poyai, 2002 .

Accurate extraction of the diffusion current in silicon p-n junction diodes

E. Simoen, C. Claeys, J. Kątcki, 1998 .

Optimized Diode Analysis of Electrical Silicon Substrate Properties

E. Simoen, C. Claeys, D. Tomaszewski, 1998 .

TEM Characterisation of Silicide Phase Formation in Ni-Based Ohmic Contacts to 4H n-SiC

A. Piotrowska, A. Kuchuk, M. Wzorek, 2011 .

Fabrication of Electrochemical Nanoelectrode for Sensor Application Using Focused Ion Beam Technology

W. Nogala, J. Ratajczak, J. Kątcki, 2014 .

A review of structural defect generation mechanisms in EFG ribbons

J. Kątcki, 1987 .

Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures

E. Papis, E. Kamińska, A. Piotrowska, 2000 .

Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers

P. Aken, P. V. van Aken, F. Phillipp, 2010, Journal of Microscopy.

Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC

A. Piotrowska, M. Myśliwiec, K. Gołaszewska, 2015 .

Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS

A. Piotrowska, A. Kuchuk, M. Wzorek, 2014 .

Buried amorphous‐layer impact on dislocation densities in silicon

K. Domanski, P. Grabiec, B. Jaroszewicz, 2006, Journal of microscopy.

Observation of radiation defects generated in edge defined film fed growth silicon ribbons under 400 kV irradiation in the high‐resolution electron microscope

D. Ast, J. Kątcki, 1988 .

Generation of Radiation Defects in the Vicinity of Twin Boundaries in EFG Silicon Ribbons

D. Ast, J. Kątcki, 1989 .

Impact of resistance on cathodoluminescence and its application for layer sheet-resistance measurements

A. Szerling, J. Ratajczak, J. Kątcki, 2008 .

Dependence of cathodoluminescence on layer resistance applied for measurement of thin‐layer sheet resistance

A. Szerling, J. Ratajczak, J. Kątcki, 2010, Journal of microscopy.

Transmission electron microscopy of iridium silicide contacts for advanced MOSFET structures with Schottky source and drain

E. Dubois, X. Wallart, G. Larrieu, 2004 .

Selective etching of dislocations in GaN and quantitative SEM analysis with shape-reconstruction method.

R. Dylewicz, M. Wzorek, J. Ratajczak, 2009, Micron.

Separation of image-distortion sources and magnetic-field measurement in scanning electron microscope (SEM).

J. Ratajczak, J. Kątcki, M. Pluska, 2009, Micron.

HVEM study of structural defects in recessed oxide isoplanar technology

P. Grabiec, J. Kątcki, R. Gleichmann, 1987 .