E. Wohlrab

A novel test structure for monitoring technological mismatches in DRAM processes

Werner Weber, H. Geib, E. Wohlrab, 1992, ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures.

A neuron MOS transistor-based multiplier cell

Werner Weber, Roland Thewes, E. Wohlrab, 1995, Proceedings of International Electron Devices Meeting.

Experimental investigation of the minimum signal for reliable operation of DRAM sense amplifiers

Werner Weber, E. Wohlrab, L. Risch, 1992 .

Experimental Investigation of the Minimum Signal of DRAM Cells for Reliable Operation of Sense Amplifiers

E. Wohlrab, L. Risch, H. Geib, 1991, ESSCIRC '91: Proceedings - Seventeenth European Solid-State Circuits Conference.

On the application of the Neuron MOS transistor principle for modern VLSI design

Werner Weber, E. Wohlrab, S. J. Prange, 1996 .

A physical lifetime prediction method for hot-carrier-stressed p-MOS transistors

Werner Weber, E. Wohlrab, M. Brox, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Intra-die device parameter variations and their impact on digital CMOS gates at low supply voltages

D. Schmitt-Landsiedel, R. Thewes, E. Wohlrab, 1995, Proceedings of International Electron Devices Meeting.