Theodore D. Moustakas

发表

Intersubband device applications of nitride quantum structures

Yan Li, Enrico Bellotti, Anirban Bhattacharyya, 2010, OPTO.

Origin of the high photoconductive gain in AlGaN films

Theodore D. Moustakas, M. Misra, 2007, SPIE Optics East.

Carrier localization and enhanced spontaneous emission due to plasma nanosheath formation in polar nanostructured materials

Theodore D. Moustakas, Spilios Riyopoulos, J. Cabalu, 2006, SPIE Optics East.

III-nitride terahertz photodetectors for the Reststrahlen gap of intersubband optoelectronics

Wei Zhang, Roberto Paiella, Theodore D. Moustakas, 2017, NanoScience + Engineering.

Characterization of electron cyclotron resonance plasmas for diamond deposition

Theodore D. Moustakas, Shu Jin, Donald Y. Jong, 1992, Optics & Photonics.

Group-III nitride VCSEL structures grown by molecular beam epitaxy

Theodore D. Moustakas, H. M. Ng, 2000, Photonics West - Optoelectronic Materials and Devices.

Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy

Kanai S. Shah, Theodore D. Moustakas, Robert P. Vaudo, 1995, Optics & Photonics.

Enhanced light extraction through nano-textured GaN interfaces via supercritical angle scattering

Theodore D. Moustakas, Spilios Riyopoulos, J. Cabalu, 2005, SPIE Optics East.

Structural characterization of III-nitride materials and devices

David J. Smith, Lin Zhou, Theodore D. Moustakas, 2011, OPTO.

Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors

Enrico Bellotti, Roberto Paiella, Theodore D. Moustakas, 2009 .

Development of AlGaN-based graded-index-separate-confinement- heterostructure deep UV emitters by molecular beam epitaxy

Haiding Sun, Roberto Paiella, Theodore D. Moustakas, 2013 .

Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells

Anirban Bhattacharyya, Lin Zhou, David J. Smith, 2009 .

Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides

Yan Li, Anirban Bhattacharyya, Roberto Paiella, 2008 .

Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells

Wei Zhang, Roberto Paiella, Theodore D. Moustakas, 2012 .

Electron drift mobility in hydrogenated a‐Si

Theodore D. Moustakas, Benjamin Abeles, T. Moustakas, 1980 .

High Density Plasma Etching Damage Effects on Contacts to n -GaN

Theodore D. Moustakas, R. Singh, Charles R. Eddy, 2000 .

Growth of III‐nitride quantum dots and their applications to blue‐green LEDs

Lin Zhou, Tao Xu, Christos Thomidis, 2008 .

Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures

Roberto Paiella, Theodore D. Moustakas, Habibe Durmaz, 2016 .

Optoelectronic control of surface charge and translocation dynamics in solid-state nanopores

Theodore D. Moustakas, Tal Gilboa, Amit Meller, 2013, Nature nanotechnology.

Molecular Beam Epitaxy

Theodore D. Moustakas, T. Moustakas, Hock M. Ng, 2002 .

Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

Theodore D. Moustakas, T. Moustakas, L. Romano, 1997 .

Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon

S. J. Berkowitz, Theodore D. Moustakas, R. J. Graham, 1992 .

Scattering of electrons at threading dislocations in GaN

Lester F. Eastman, Theodore D. Moustakas, Nils Guenter Weimann, 1998 .

Plasma nanosheath formation with carrier accumulation and enhanced localized spontaneous emission at “quantum wedges” in textured GaN

Theodore D. Moustakas, Spilios Riyopoulos, J. S. Cabalu, 2007 .

Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency

Haiding Sun, Wei Zhang, Lin Zhou, 2012 .

Distributed Bragg reflectors based on AlN/GaN multilayers

Theodore D. Moustakas, T. Moustakas, E. Iliopoulos, 1999 .

Density of states, hybridization, and band-gap evolution in AlxGa1-xN alloys

Theodore D. Moustakas, Jinghua Guo, Joseph Nordgren, 1998 .

Visible Light-Emitting Diodes Grown by Plasma Assisted Molecular Beam Epitaxy on Hydride Vapor-Phase Epitaxy GaN Templates and the Development of Dichromatic (Phosphorless) White LEDs

Theodore D. Moustakas, J. Cabalu, Adrian Williams, 2005 .

High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

Theodore D. Moustakas, S. Chu, T. Moustakas, 2000 .

Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption

Roberto Paiella, Theodore D. Moustakas, Kristina Driscoll, 2005 .

High reflectivity and crack-free AlGaN 'AlN ultraviolet distributed Bragg reflectors

Anirban Bhattacharyya, Theodore D. Moustakas, J. Cabalu, 2002 .

Enhanced light extraction and spontaneous emission from textured GaN templates formed during growth by the HVPE method

Christos Thomidis, Theodore D. Moustakas, Spilios Riyopoulos, 2004 .

Mechanism of yellow luminescence in GaN

Piotr Perlin, Theodore D. Moustakas, Izabella Grzegory, 1995 .

Broadening of near-band-gap photoluminescence in n-GaN films

Theodore D. Moustakas, T. Moustakas, E. Iliopoulos, 1998 .

The role of dislocation scattering in n-type GaN films

Lester F. Eastman, Theodore D. Moustakas, Nils Guenter Weimann, 1998 .

Monte Carlo study of GaN versus GaAs terahertz quantum cascade structures

Enrico Bellotti, Roberto Paiella, Theodore D. Moustakas, 2008 .

The role of dislocations as nonradiative recombination centers in InGaN quantum wells

Theodore D. Moustakas, T. Moustakas, J. Abell, 2008 .

Pride: Photonics Research In Interdisciplinary Education

Michael F. Ruane, Theodore D. Moustakas, M. S. Unlu, 1996 .

Thickness dependent thermal conductivity of gallium nitride

Theodore D. Moustakas, Denis Nothern, Gordie Brummer, 2017 .

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Theodore D. Moustakas, R. J. Graham, Marco Fanciulli, 1991 .

Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

Piotr Perlin, Theodore D. Moustakas, Adam Pietraszko, 1994 .

Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy

Oliver Ambacher, Martin Stutzmann, H. Angerer, 1996 .

Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1 1 0 0) and (0 0 0 1) GaN

Wei Li, Anirban Bhattacharyya, Bruce H. T. Chai, 2003 .

Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

Anirban Bhattacharyya, Lin Zhou, Theodore D. Moustakas, 2009 .

Sequential tunneling transport characteristics of GaN/AlGaN coupled- quantum-well structures

Wei Zhang, Anirban Bhattacharyya, Lin Zhou, 2010 .

Ultraviolet electroabsorption modulator based on AlGaN∕GaN multiple quantum wells

Christos Thomidis, Theodore D. Moustakas, I. Friel, 2005 .

Growth of GaN by ECR-assisted MBE

Theodore D. Moustakas, R. J. Molnar, T. Moustakas, 1993 .

Intersubband absorption in AlN∕GaN∕AlGaN coupled quantum wells

Anirban Bhattacharyya, Lin Zhou, Roberto Paiella, 2007 .

Growth and Characterization of non-polar (11–20) GaN and AlGaN/GaN MQWs on R-plane (10–12) sapphire

Anirban Bhattacharyya, David J. Smith, Theodore D. Moustakas, 2002 .

DISORDER AND THE OPTICAL ABSORPTION EDGE OF HYDROGENATED AMORPHOUS SILICON

Theodore D. Moustakas, B. G. Brooks, Benjamin Abeles, 1981 .

Metal contacts to gallium nitride

Theodore D. Moustakas, James S. Foresi, T. Moustakas, 1993 .

Enhancement of Yellow Light Extraction Efficiency of Y 3Al 5O 12:Ce 3+ Ceramic Converters Using a 2-D TiO 2 Hexagonal-Lattice Nanocylinder Photonic Crystal Layer

Haiding Sun, Madis Raukas, Theodore D. Moustakas, 2016, IEEE Photonics Journal.

Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy

Theodore D. Moustakas, T. Moustakas, E. Iliopoulos, 2002 .

Hydrogenation of p‐type gallium nitride

Theodore D. Moustakas, R. J. Molnar, T. Moustakas, 1994 .

Investigation of vertical transport in n-GaN films grown by molecular beam epitaxy using Schottky barrier diodes

Theodore D. Moustakas, A. V. Sampath, T. Moustakas, 2000 .

Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

Theodore D. Moustakas, Karl F. Ludwig, T. Moustakas, 1998 .

AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy

Christos Thomidis, Theodore D. Moustakas, Yitao Liao, 2011 .

Gallium nitride (GaN)

Theodore D. Moustakas, Jacques I. Pankove, J. Pankove, 1998 .