Doyeol Ahn

发表

Nonpolar and semipolar GaN, optical gain and efficiency

Seoung-Hwan Park, Doyeol Ahn, 2013, Photonics West - Optoelectronic Materials and Devices.

A unified analytical SOI MOSFET model for fully-and partially-depleted SOI devices

Yun Seop Yu, Doyeol Ahn, Sungwoo Hwang, 2001 .

Direct nanometer-scale patterning by the cantilever oscillation of an atomic force microscope

Eun Kyu Kim, Suho Choi, Doyeol Ahn, 1999 .

Depolarization effects in (112¯2)-oriented InGaN∕GaN quantum well structures

Seoung-Hwan Park, Doyeol Ahn, Seoung-Hwan Park, 2007 .

Optical gain and gain suppression of quantum-well lasers with valence band mixing

Shun Lien Chuang, Doyeol Ahn, S. Chuang, 1990 .

Transport Properties of a DNA-Conjugated Single-Wall Carbon Nanotube Field-Effect Transistor

Doyeol Ahn, Sungwoo Hwang, Jong Seung Hwang, 2009 .

Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs

Eun Kyu Kim, Suho Choi, Doyeol Ahn, 2000 .

Transmission-Type Radio-Frequency Single-Electron Transistor with In-Plane-Gate Single-Electron Transistor

Yun Seop Yu, Doyeol Ahn, Sungwoo Hwang, 2007 .

Analytical Threshold Voltage Model Including Effective Conducting Path Effect (ECPE) for Surrounding-Gate MOSFETs (SGMOSFETs) With Localized Charges

Yun Seop Yu, Doyeol Ahn, Sung Woo Hwang, 2010, IEEE Transactions on Electron Devices.

Electrical transport through 60 base pairs of poly(dG)-poly(dC) DNA molecules

Doyeol Ahn, Sungwoo Hwang, Dong June Ahn, 2002 .

Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers

Seoung-Hwan Park, Doyeol Ahn, Seoung-Hwan Park, 2010 .

Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

Jong-Ho Lee, Doyeol Ahn, Hyungcheol Shin, 1998 .

Optical Properties of Staggered InGaN/InGaN/GaN Quantum-Well Structures with Ga- and N-Faces

Seoung-Hwan Park, Doyeol Ahn, Yong-Tak Lee, 2011 .

A compact analytical current conduction model for a depletion-mode n-type nanowire field-effect transistor with a bottom-gate structure

Yun Seop Yu, Doyeol Ahn, Sungwoo Hwang, 2008 .

Dispersive full-wave finite-difference time-domain analysis of the bipolar cylindrical cloak based on the effective medium approach

Doyeol Ahn, D. Ahn, Y. Y. Lee, 2013 .

Equivalent circuit model of semiconductor nanowire diode by SPICE.

Yun Seop Yu, Doyeol Ahn, Sungwoo Hwang, 2007 .

Relativistic entanglement of quantum states and nonlocality of Einstein-Podolsky-Rosen(EPR) paradox

Doyeol Ahn, Sung Woo Hwang, Hyuk-jae Lee, 2002 .

Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment

Shun Lien Chuang, Seoung-Hwan Park, Doyeol Ahn, 2000 .

Optical gain of CdZnSe/ZnSe quantum well lasers

Doyeol Ahn, H. Y. Lee, T.‐K. Yoo, 1991 .

Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field

Shun Lien Chuang, Doyeol Ahn, S. Chuang, 1987 .

Faraday's Induction Experiment in Nano-Transformers

Doyeol Ahn, Sung Woo Hwang, D. Ahn, 2008, IEEE Transactions on Nanotechnology.

Implicit Continuous Current–Voltage Model for Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Including Interface Traps

Yun Seop Yu, Doyeol Ahn, Sung Woo Hwang, 2011, IEEE Transactions on Electron Devices.

A transmission-type radio-frequency single-electron transistor (RF-SET) with an in-plane-gate SET (IPG-SET)

Yun Seop Yu, Doyeol Ahn, S. H. Son, 2006 .

Model of the field‐effect quantum‐well laser with free‐carrier screening and valence band mixing

Shun Lien Chuang, Doyeol Ahn, S. Chuang, 1988 .

Relativistic entanglement and Bell’s inequality

Doyeol Ahn, Sung Woo Hwang, Hyuk-jae Lee, 2003 .

Theory of optical gain in strained‐layer quantum wells within the 6×6 Luttinger–Kohn model

Shun Lien Chuang, Doyeol Ahn, S. Chuang, 1995 .

Valence‐band mixing effects on the gain and the refractive index change of quantum‐well lasers

Yia-Chung Chang, Doyeol Ahn, S. L. Chuang, 1988 .

FABRICATION AND ELECTRICAL CHARACTERIZATION OF PLANAR RESONANT TUNNELING DEVICES INCORPORATING INAS SELF-ASSEMBLED QUANTUM DOTS

Jung ho Park, Eun Kyu Kim, Doyeol Ahn, 1999 .

Electrical Transport Properties of Au-Doped Deoxyribonucleic Acid Molecules

Doyeol Ahn, Sungwoo Hwang, Jung-Il Jin, 2005 .

Optical gain in a strained-layer quantum-well laser

Doyeol Ahn, D. Ahn, Chuang Shun-Lien, 1988 .

Spontaneous emission rate of green strain‐compensated InGaN/InGaN LEDs using InGaN substrate

Seoung-Hwan Park, Doyeol Ahn, Yong-Tae Moon, 2011 .

Nonlinear intersubband optical absorption in a semiconductor quantum well

Shun Lien Chuang, Doyeol Ahn, S. Chuang, 1987 .

Si single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic

Byung-Gook Park, Jong Duk Lee, Doyeol Ahn, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Effect of hydrogen trapping on void growth and coalescence in metals and alloys

Robert H. Dodds, Doyeol Ahn, Petros Athanasios Sofronis, 2008 .

Magnetic bead detection using nano-transformers.

Doyeol Ahn, Sung Woo Hwang, D. Ahn, 2010, Nanotechnology.

Dense coding in entangled states

Doyeol Ahn, Sungwoo Hwang, D. Ahn, 2002 .

A SPICE-Compatible New Silicon Nanowire Field-Effect Transistors (SNWFETs) Model

Yun Seop Yu, Doyeol Ahn, Sung Woo Hwang, 2009, IEEE Transactions on Nanotechnology.

Single-electron transistor based on a silicon-on-insulator quantum wire fabricated by a side-wall patterning method

Doyeol Ahn, J. D. Lee, Suk-Kang Sung, 2001 .

High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

Seoung-Hwan Park, Doyeol Ahn, Seoung-Hwan Park, 2009 .

Variational calculations of subbands in a quantum well with uniform electric field: Gram–Schmidt orthogonalization approach

Doyeol Ahn, S. L. Chuang, S. Chuang, 1986 .

Optical gain in InGaN∕InGaAlN quantum well structures with zero internal field

Seoung-Hwan Park, Doyeol Ahn, Seoung-Hwan Park, 2008 .