Naoki Kaneda

1.7-kV and 0.55- $\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability

Huili Grace Xing, Kazuki Nomoto, Zongyang Hu, 2016, IEEE Electron Device Letters.

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

Takehiro Yoshida, Hiroshi Ohta, Tomoyoshi Mishima, 2015, IEEE Electron Device Letters.