K. Goto

High-power 1.3-µm InGaAsP P-substrate buried crescent lasers

W. Susaki, E. Oomura, H. Higuchi, 1985 .

Analysis of the in-plane bandgap distribution in selectively grown InGaAs/InGaAsP multiple quantum well by low pressure metalorganic chemical vapor deposition

Saburo Takamiya, Shigeru Mitsui, Tatsuya Kimura, 1994 .

Narrow-beam and power-penalty-free 1.3-/spl mu/m laser diodes with monolithically integrated waveguide lens formed by selective-area epitaxial growth

E. Omura, A. Takemoto, Y. Miyazaki, 1996, IEEE Photonics Technology Letters.