Tomohiro Migita

发表

Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450℃ Furnace Annealing (Special Issue on Sub-Half Micron Si Device and Process Technologies)

Tadashi Shibata, Koji Kotani, Tadahiro Ohmi, 1993 .

Eliminating Metal‐Sputter Contamination in Ion Implanter for Low‐Temperature‐Annealed, Low‐Reverse‐Bias‐Current Junctions

Tadashi Shibata, Tadahiro Ohmi, Takahisa Nitta, 1995 .