F. Sugimoto

A 65 nm CMOS technology with a high-performance and low-leakage transistor, a 0.55 /spl mu/m/sup 2/ 6T-SRAM cell and robust hybrid-ULK/Cu interconnects for mobile multimedia applications

Naoto Horiguchi, Naoyoshi Tamura, Takayuki Ohba, 2003, IEEE International Electron Devices Meeting 2003.

45 nm-node BEOL integration featuring porous-ultra-low-k/Cu multilevel interconnects

S. Nakai, H. Kitada, T. Nakamura, 2005, Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..