G. J. Tessmer

发表

Materials and Device Characteristics of Pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP High Electron Mobility Transistors

P. M. Smith, J. M. Ballingall, P. Ho, 1989 .

Diamond devices and electrical properties

Dean Malta, L. S. Plano, Michelle L. Hartsell, 1995 .

Novel pseudomorphic high electron mobility transistor structures with GaAs-In0.3Ga0.7As thin strained superlattice active layers

P. Ho, J. Ballingall, N. Lewis, 1989 .

Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers

P. Ho, J. Ballingall, P. Martin, 1990 .

Bias assisted etching of diamond in a conventional chemical vapor deposition reactor

B. Stoner, D. L. Dreifus, G. J. Tessmer, 1993 .

Nano-tribological investigations of carbon overcoats: correlation with Raman spectra

Chung-Jen Lu, David B. Bogy, Stephen S. Rosenblum, 1995 .

Electrical Properties of Diamond for Device Applications

D. Malta, D. L. Dreifus, G. J. Tessmer, 1995 .