Toshiki Makimoto

发表

High-power extraction of 340- to 350-nm UV LEDs

Toshio Nishida, Tomoyuki Ban, Hisao Saito, 2004, SPIE OPTO.

Novel nitride semiconductor devices

Toshiki Makimoto, 2004 .

Insulator engineering in GaN-based MIS HFETs

Toshiki Makimoto, Noriyuki Watanabe, Haruki Yokoyama, 2007, SPIE OPTO.

Systematic Study of Insulator Deposition Effect (Si3N4, SiO2, AlN, and Al2O3) on Electrical Properties in AlGaN/GaN Heterostructures

Takatomo Enoki, Toshiki Makimoto, Noriyuki Watanabe, 2007 .

InGaN quantum wells with small potential fluctuation grown on InGaN underlying layers

Hidetoshi Nakano, Toshiki Makimoto, Hideki Gotoh, 2006 .

Influence of epitaxy on the surface conduction of diamond film

Naoki Kobayashi, A. Aleksov, Toshiki Makimoto, 2004 .

Hexagonal boron nitride grown by MOVPE

Toshiki Makimoto, Tetsuya Akasaka, T. Makimōto, 2008 .

Diamond-based RF power transistors: Fundamentals and applications

Kenji Ueda, Toshiki Makimoto, Makoto Kasu, 2007 .

High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates

Toshiki Makimoto, Atsushi Nishikawa, Tetsuya Akasaka, 2006 .

Aluminum nitride deep-ultraviolet light-emitting diodes

Toshiki Makimoto, Makoto Kasu, Yoshitaka Taniyasu, 2006 .

Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Hideki Hasegawa, Eiichi Sano, Toshiki Makimoto, 2004 .

Gate capacitance-voltage characteristics of submicron-long-gate diamond field-effect transistors with hydrogen surface termination

Kenji Ueda, Toshiki Makimoto, Makoto Kasu, 2007 .

Temperature dependent DC and RF performance of diamond MESFET

Kenji Ueda, Satoshi Sasaki, Toshiki Makimoto, 2006 .

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Naoki Kobayashi, Hideki Hasegawa, Takashi Fukui, 2018 .

High-temperature characteristics up to 590 °c of a pnp AlGaN/GaN heterojunction bipolar transistor

Toshiki Makimoto, K. Kumakura, T. Makimōto, 2009 .

Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

Naoki Kobayashi, Toshiki Makimoto, K. Kumakura, 2003 .

High RF output power for H-terminated diamond FETs

Kenji Ueda, Satoshi Sasaki, Toshiki Makimoto, 2006 .

RF performance of diamond metel-semiconductor field-effect transistor at elevated temperatures and analysis of its equivalent circuit

Kenji Ueda, Satoshi Sasaki, Toshiki Makimoto, 2006 .

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto, Yoshiharu Yamauchi, K. Kumakura, 2004 .

Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer

Naoki Kobayashi, Toshiki Makimoto, Kazuhide Kumakura, 2001 .

AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates

Toshio Nishida, Tomoyuki Ban, Hisao Saito, 2004 .

High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers

Toshiki Makimoto, Hideki Gotoh, Tadashi Saito, 2004 .

Low Resistance Non-Alloy Ohmic Contact to p-Type GaN Using Mg-Doped InGaN Contact Layer

Naoki Kobayashi, Toshiki Makimoto, Kazuhide Kumakura, 2001 .

Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

Naoki Kobayashi, Hideki Hasegawa, Takashi Fukui, 2007 .