J.C. De Jaeger

Current instabilities and deep level investigation on AlGaN/GaN HEMT's on silicon and sapphire substrates

C. Gaquiere, A. Souifi, N. Sghaier, 2004, Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004..

Study of Field Plate AlGaN/GaN HEMTs by Means of a 2D-Hydrdynamic Model for Power Applications

J.C. De Jaeger, M. Rousseau, B. Benbakhti, 2006, 2006 European Microwave Integrated Circuits Conference.

V-band MMIC mixers using AIGaAs/InGaAs/GaAs PM HFET

J. Favre, J.C. De Jaeger, R. Allam, 1995, 1995 25th European Microwave Conference.

AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz

C. Gaquiere, D. Ducatteau, J.C. De Jaeger, 2004, IEEE Electron Device Letters.

Punch-through in short-channel AlGaN/GaN HFETs

D. Ducatteau, J.C. De Jaeger, E. Morvan, 2006, IEEE Transactions on Electron Devices.

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

S. Delage, C. Gaquiere, D. Ducatteau, 2006, IEEE Electron Device Letters.

Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers

Y. Mancuso, G. Dambrine, S. Lepilliet, 2005, European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005.

AlGaN/GaN HEMT High Power Densities on $\hbox{SiC/} \hbox{SiO}_{2}$/poly-SiC Substrates

C. Gaquiere, Y. Douvry, J.C. De Jaeger, 2009, IEEE Electron Device Letters.

High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz

S. Delage, C. Gaquiere, F. Semond, 2002, IEEE Electron Device Letters.

AlGaN/GaN HEMTs on epitaxies grown on composite substrate

C. Brylinski, H. Gerard, J.C. De Jaeger, 2007, 2007 European Microwave Integrated Circuit Conference.

60 GHz MMIC mixer using a dual-gate PM HEMT

Y. Crosnier, P. Bourne, D. Langrez, 1995, Proceedings of ISSE'95 - International Symposium on Signals, Systems and Electronics.