Hideo Aida

发表

S1660103 Suggestion and processing properties of the innovative CMP/P-CVM combined processing method : Breakthrough to the high efficiency processing of wide gap crystal materials

Syuhei Kurokawa, Tsutomu Yamazaki, Yasuhisa Sano, 2014 .

Patterned Sapphire Substrates for III-Nitride Epitaxial Growth

Michio Uneda, Yutaka Kimura, Seong-Woo Kim, 2018, Int. J. Autom. Technol..

Investigation into Chemical Mechanical Polishing Mechanism of Hard-to-Process Materials Using a Commercially Available Single-Sided Polisher

Michio Uneda, Ken-Ichi Ishikawa, Hideo Aida, 2015, Int. J. Autom. Technol..

WeC-2-3 Development of innovative dilatancy pad and high-speed / high-pressure polishing machine aimed for high-efficient and high-quality processing of next generation semiconductor substrates

Tsutomu Yamazaki, Tadakazu Miyashita, Toshiro Doi, 2015 .

Effect of internally focused laser processing of sapphire substrate on bowing management for III-nitride epitaxy

Hideo Aida, Keiji Honjo, Hidetoshi Takeda, 2013, Photonics West - Optoelectronic Materials and Devices.

Development of Novel Groove Patterns for CMP Pad

Michio Uneda, Osamu Ohnishi, Syuhei Kurokawa, 2012 .

Effects of N-Face Finishing on Geometry of Double-Side Polished GaN Substrate

Michio Uneda, Seong-Woo Kim, Toshiro Doi, 2014, International Journal of Automation Technology.

Effect of Initial Bow of Sapphire Substrate on Substrate Curvature during InGaN Growth Stage of Light Emitting Diode Epitaxy

Hideo Aida, Kazuhiko Sunakawa, Dong S. Lee, 2012 .

Control of initial bow of sapphire substrates for III-nitride epitaxy by internally focused laser processing

Hideo Aida, Hidetoshi Takeda, Koji Koyama, 2012 .

Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

Hideo Aida, Hidetoshi Takeda, Koji Koyama, 2011 .

Growth of β-Ga2O3 Single Crystals by the Edge-Defined, Film Fed Growth Method

Hideo Aida, Hidetoshi Takeda, Yoichi Yaguchi, 2008 .

Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

Michio Uneda, Tsutomu Yamazaki, Hideo Aida, 2012 .

III–Nitride Epitaxy on Atomically Controlled Surface of Sapphire Substrate with Slight Misorientation

Hideo Aida, Kazuhiko Sunakawa, Koji Koyama, 2012 .