N.J. Kang

An outstanding and highly manufacturable 80nm DRAM technology

J.W. Lee, H.J. Kim, Kinam Kim, 2003, IEEE International Electron Devices Meeting 2003.

High-density low-power-operating DRAM device adopting 6F/sup 2/ cell scheme with novel S-RCAT structure on 80nm feature size and beyond

Y.S. Lee, J.M. Park, J.H. Kim, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

The excellent scalability of the RCAT (recess-channel-array-transistor) technology for sub-70nm DRAM feature size and beyond

H.J. Kim, Kinam Kim, H.S. Kim, 2005, IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..

S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond

H.J. Kim, Kinam Kim, Y.S. Lee, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs

Y.S. Lee, J.M. Park, Y.S. Hwang, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..