Daisuke Kawamura

发表

Influence of the watermark in immersion lithography process

Daisuke Kawamura, Tomoyuki Takeishi, Koutarou Sho, 2005, SPIE Advanced Lithography.

Dependence of ArF resist on exposed area ratio

Daisuke Kawamura, Kenji Chiba, Eishi Shiobara, 2004, SPIE Advanced Lithography.

Resist edge roughness with reducing pattern size

Shoji Mimotogi, Daisuke Kawamura, Yasunobu Onishi, 1998, Advanced Lithography.

Nanopatterning of diblock copolymer directed self-assembly lithography with wet development

Daisuke Kawamura, Takayuki Toshima, Takahiro Kitano, 2011, Advanced Lithography.

Process liability evaluation for EUVL

Takeshi Koshiba, Kazuo Tawarayama, Hajime Aoyama, 2009, Advanced Lithography.

Study of ion implantation into EUV resist for LWR improvement

Daisuke Kawamura, Yukiko Kikuchi, Hiroyuki Mizuno, 2011, Advanced Lithography.

Pattern transfer process development for EUVL

Yuusuke Tanaka, Daisuke Kawamura, Toshiro Itani, 2009, Advanced Lithography.

Process liability evaluation for beyond 22nm node using EUVL

Kazuo Tawarayama, Shunko Magoshi, Hajime Aoyama, 2010, Advanced Lithography.

Experimental Study on Ship-Handling Limits under Ship-Bank Interaction Forces

Daisuke Kawamura, Toshio Iseki, 2011 .

Development of an accurate empirical model for ArF lithography

Soichi Inoue, Shoji Mimotogi, Daisuke Kawamura, 2004, SPIE Advanced Lithography.

Line-edge roughness of chemically amplified resists

Daisuke Kawamura, Yasunobu Onishi, Kenji Chiba, 2000, Advanced Lithography.

Fabrication of 35nm via-hole patterns for interconnect test chips with EUV lithography

Kazuo Tawarayama, Shunko Magoshi, Hajime Aoyama, 2010, Advanced Lithography.

Current benchmarking results of EUV resist at Selete

Koji Kaneyama, Daisuke Kawamura, Toshiro Itani, 2008, Lithography Asia.

Challenges of EUVL resist process toward practical application

Daisuke Kawamura, Takayuki Toshima, Shinichi Ito, 2010, Advanced Lithography.

Nanopatterning of diblock copolymer directed self-assembly lithography with wet development

Makoto Muramatsu, Daisuke Kawamura, Takayuki Toshima, 2012 .

Effect of resist polymer molecular weight on EUV lithography

Daisuke Kawamura, Toshiro Itani, Hideaki Tsubaki, 2009, Advanced Lithography.

Pattern defect study using cover material film in immersion lithography

Daisuke Kawamura, Tomoyuki Takeishi, Kentarou Matsunaga, 2006, SPIE Advanced Lithography.

Process liability evaluation for extreme ultraviolet lithography

Takeshi Koshiba, Kazuo Tawarayama, Hajime Aoyama, 2009 .

LWR reduction in low-k1 ArF-immersion lithography

Daisuke Kawamura, Tetsu Kawasaki, Shinichi Ito, 2008, SPIE Advanced Lithography.

Study of the impact of illumination intensity distribution on resist parameter modification

Shoji Mimotogi, Daisuke Kawamura, Kazuya Sato, 2004, SPIE Advanced Lithography.

Applicability of extreme ultraviolet lithography to fabrication of half pitch 35nm interconnects

Kazuo Tawarayama, Hajime Aoyama, Yuusuke Tanaka, 2010, Advanced Lithography.

Dependence of resist profile on exposed area ratio

Daisuke Kawamura, Yasunobu Onishi, Kentaro Matsunaga, 2001, SPIE Advanced Lithography.

Advancements in EUV Resist Materials and Processing

Koji Kaneyama, Daisuke Kawamura, Hiroaki Oizumi, 2009 .

Development Process for Chemically Amplified Resist by KrF Imaging

Shoji Mimotogi, Daisuke Kawamura, Yasunobu Onishi, 1998 .

A 0.15 /spl mu/m KrF lithography for 1 Gb DRAM product using highly printable patterns and thin resist process

Soichi Inoue, Masamitsu Itoh, Daisuke Kawamura, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

Application of a thin-resist process for KrF imaging to 130 nm device fabrication

Daisuke Kawamura, Tsukasa Azuma, Seiro Miyoshi, 1999 .

Viability of conventional KrF imaging for 150 nm lithography

Shoji Mimotogi, Daisuke Kawamura, Yasunobu Onishi, 1997 .

Resist design for resolution limit of KrF imaging towards 130 nm lithography

Daisuke Kawamura, Yasunobu Onishi, Kentaro Matsunaga, 1998 .