D.L. Kwong

Modeling of direct tunneling current through gate dielectric stacks

S. Mudanai, S. Banerjee, F. Register, 2000, 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502).

Gate oxide thickness dependence of RIE-induced damages on n-channel MOSFET reliability

D.L. Kwong, A.B. Joshi, L. Chung, 1996, Proceedings of International Reliability Physics Symposium.