Keiko Ariyoshi

3kV-class DIMOSFET on 4H-SiC (000-1)

Yasunori Tanaka, Hiroshi Kono, Masaru Furukawa, 2012 .

14.6 mΩcm2 3.3 kV DIMOSFET on 4H-SiC (000-1)

Takuma Suzuki, Masaru Furukawa, Keiko Ariyoshi, 2014 .

Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs

Keiko Ariyoshi, Shinsuke Harada, Hajime Okumura, 2015 .

3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field

Yusuke Kobayashi, Keiko Ariyoshi, Shinsuke Harada, 2016, IEEE Electron Device Letters.