P. Geiss

A 0.13 /spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT

P. Gray, J. Dunn, G. Freeman, 2003, 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440).