D. G. Chtchekine

Donor-hydrogen bound exciton in epitaxial GaN

Zhe Chuan Feng, S. J. Chua, G. D. Gilliland, 1999 .

Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN

S. Chua, Z. Feng, G. D. Gilliland, 2001 .

Photoluminescence of quasi-direct transitions in disordered In/sub 1-x/Ga/sub x/P/graded GaP alloys

M. Craford, H. Hjalmarson, J. Yu, 1997 .

Temperature Dependence of Bound Exciton Emissions in GaN

I. Ferguson, S. Chua, Z. Feng, 1998 .

Optical properties of GaN epitaxial films grown by low‐pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN3)

S. Stock, S. Ralph, G. D. Gilliland, 1995 .

Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)

S. Stock, Yuxiang Chen, S. Ralph, 1997 .