Robert Hull

发表

Characterization of InGaAs strained layers on GaAs: comparison of dislocation densities with device performance

J. Walker, J. M. Bonar, Robert Hull, 1990, Other Conferences.

Nanoscale materials characterization of degradation in VCSELs

Kent D. Choquette, Andrew A. Allerman, Kent M. Geib, 2003, SPIE OPTO.

Adaptation of Dunn Solar Telescope for Jovian Doppler spectro imaging

Julien Dejonghe, Yves Bresson, Olivier Preis, 2017, Optical Engineering + Applications.

Growth of quantum fortress structures in Si1−xGex/Si via combinatorial deposition

John C. Bean, Thomas E. Vandervelde, Robert Hull, 2003 .

Luminescence and Photophysics of CdS Semiconductor Clusters: The Nature of the Emitting Electronic State.

Louis E. Brus, Robert Hull, Timothy D. Harris, 1986 .

Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography

John C. Bean, Derren Dunn, Thomas E. Vandervelde, 2006 .

Molecular beam deposition of high quality silicon oxide dielectric films

Naresh Chand, J. W. Osenbach, Leonard C. Feldman, 1995 .

Variation in misfit dislocation behavior as a function of strain in the GeSi/Si system

John C. Bean, Robert Hull, J. Bean, 1989 .

Excited electronic states and optical spectra of ZnS and CdS crystallites in the ≊15 to 50 Å size range: Evolution from molecular to bulk semiconducting properties

Louis E. Brus, Robert Hull, R. Rossetti, 1985 .

Selective oxidation of buried AlGaAs versus AlAs layers

Kent D. Choquette, Hong Q. Hou, Kent M. Geib, 1996 .

New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in‐situ transmission electron microscope observations of misfit dislocations in thin strained epitaxial layers

Robert Hull, J. C. Bean, J. Bean, 1993 .

The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed

John C. Bean, Thomas E. Vandervelde, James L. Merz, 2006 .

Luminescence and photophysics of cadmium sulfide semiconductor clusters: the nature of the emitting electronic state

Louis E. Brus, Robert Hull, T. D. Harris, 1986 .

Improvement in heteroepitaxial film quality by a novel substrate patterning geometry

John C. Bean, G. S. Higashi, Robert Hull, 1992 .

Focused ion-beam tomography

Derren Dunn, Robert Hull, Gary J. Shiflet, 2004 .

Interface imperfections in metal/Si multilayers

David L. Windt, Warren K. Waskiewicz, Robert Hull, 1992 .

Stability of semiconductor strained‐layer superlattices

John C. Bean, Robert Hull, J. M. Gibson, 1986 .

Current gain enhancement in bipolar transistors by low‐energy ion beam modification of the polycrystalline silicon emitter

John C. Bean, B. Jalali, G. S. Higashi, 1991 .

Ge0.2Si0.8/Si Bragg‐reflector mirrors for optoelectronic device applications

John C. Bean, Joe C. Campbell, Ravi Kuchibhotla, 1993 .

Higher excited electronic states in clusters of ZnSe, CdSe, and ZnS: Spin‐orbit, vibronic, and relaxation phenomena

Louis E. Brus, Robert Hull, L. Brus, 1986 .

Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes

Dieter Bimberg, Robert Hull, Shih-Yuan Wang, 1986 .

Ge dot organization on Si substrates patterned by focused ion beam

A. Karmous, Robert Hull, Isabelle Berbezier, 2004 .

The generation of mechanically mixed layers (MMLs) during sliding contact and the effects of lubricant thereon

Robert Hull, Doris Kuhlmann-Wilsdorf, D. Kuhlmann-wilsdorf, 2000 .

Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers

Dimitri A. Antoniadis, Judy L. Hoyt, Dalaver H. Anjum, 2003 .

Reconstruction of three-dimensional chemistry and geometry using focused ion beam microscopy

Robert Hull, R. Hull, D. Dunn, 1999 .

Nucleation of GaAs on Si: Experimental evidence for a three‐dimensional critical transition

Robert Hull, R. Hull, A. Fischer-Colbrie, 1987 .

Nucleation and Growth of CdSe on ZnS Quantum Crystallite Seeds and Vice Versa, in Inverse Micelle Media

Louis E. Brus, Robert Hull, Moungi G. Bawendi, 1990 .

Catastrophic degradation lines at the facet of InGaAsP/InP lasers investigated by transmission electron microscopy

R. A. Logan, Robert Hull, C. W. Snyder, 1995 .

Changes in electrical device characteristics during the in situ formation of dislocations

John C. Bean, Robert Hull, Frances M. Ross, 1993 .

Germanium silicon : physics and materials

John C. Bean, Robert Hull, J. Bean, 1999 .

Properties of InP self-assembled quantum dots embedded in In0.49(AlxGa1−x)0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition

Russell D. Dupuis, Robert Hull, Nick Holonyak, 2002 .

Quantification of electron–phonon scattering for determination of temperature variations at high spatial resolution in the transmission electron microscope

Robert Hull, R. Hull, Li He, 2012, Nanotechnology.

Growth of GeSi/Si strained‐layer superlattices using limited reaction processing

W. G. Opyd, Robert Hull, James F. Gibbons, 1987 .

Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films: Nucleation of “quantum fortresses”

Robert Hull, J. Gray, R. Hull, 2002 .

Interpretation of dislocation propagation velocities in strained GexSi1−x/Si(100) heterostructures by the diffusive kink pair model

John C. Bean, Robert Hull, L. J. Peticolas, 1991 .

Selective oxidation of buried AlGaAs for fabrication of vertical-cavity lasers

Kent D. Choquette, Hong Q. Hou, Kent M. Geib, 1996 .

Nanometer-scale arrangement of human serum albumin by adsorption on defect arrays created with a finely focused ion beam

Robert Hull, Jos Buijs, David T. Mathes, 1998 .

A phenomenological description of strain relaxation in GexSi1−x/Si(100) heterostructures

John C. Bean, Robert Hull, J. Bean, 1989 .

Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures

S. S. Laderman, Robert Hull, J. N. Miller, 1988 .

Nucleation of misfit dislocations in strained-layer epitaxy in the GexSi1−x/Si system

John C. Bean, Robert Hull, J. Bean, 1989 .

Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation

Robert Hull, Mark C. Reuter, Frances M. Ross, 2007 .

Strain relaxation in patterned strained silicon directly on insulator structures

Dimitri A. Antoniadis, Judy L. Hoyt, Robert Hull, 2005 .