E.-M. Pavelescu

High-brightness quantum well and quantum dot tapered lasers

M. Krakowski, M. Lecomte, N. Michel, 2008, SPIE OPTO.

Photoluminescence study of hexagonal GaN heteroepitaxial layers grown by molecular beam epitaxy on Al/sub 2/O/sub 3/, Si and GaAs substrates

Alexandros Georgakilas, V. Cimpoca, E.-M. Pavelescu, 2000, 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486).

High power, low threshold 1060-nm InGaAs/AlGaAs quantum dot lasers

I. Esquivias, E.-M. Pavelescu, C. Gilfert, 2008, 2008 IEEE 21st International Semiconductor Laser Conference.

Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100)

Johann Peter Reithmaier, E.-M. Pavelescu, C. Gilfert, 2010 .

Wavelength stabilized quantum dot lasers for high power applications

Johann Peter Reithmaier, Alfred Forchel, W. Kaiser, 2009 .

1.32-μm GaInNAs-GaAs laser with a low threshold current density

M. Pessa, E.-M. Pavelescu, T. Jouhti, 2002, IEEE Photonics Technology Letters.

The energy-fine structure of GaInNAs∕GaAs multiple quantum wells grown at different temperatures and postgrown annealed

Tomi Jouhti, M. Pessa, J. Andrzejewski, 2004 .

Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Wei Li, Janne Konttinen, Tomi Jouhti, 2002 .

Enhanced optical performances of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

Janne Konttinen, Tomi Jouhti, Wei Li, 2002 .

GaInAs/(Al)GaAs quantum-dot lasers with high wavelength stability

Johann Peter Reithmaier, Ignacio Esquivias, E.-M. Pavelescu, 2008 .