J. F. Chen

Feasibility study of double exposure lithography for 65nm and 45nm node

Stephen Hsu, Jungchul Park, Douglas Van Den Broeke, 2005, Photomask Japan.

Model-based scattering bars implementation for 65nm and 45nm nodes using IML technology

Stephen Hsu, Robert Socha, Michael Hsu, 2005, Photomask Japan.

Extending aggressive low-k1 design rule requirements for 90-nm and 65-nm nodes via simultaneous optimization of NA, illumination, and OPC

Ting Chen, Stephen D. Hsu, Robert J. Socha, 2004, SPIE Advanced Lithography.

RET masks for the final frontier of optical lithography

Jungchul Park, Sangbong Park, Ting Chen, 2005, Photomask Japan.

Lithography manufacturing implementation for 65 nm and 45 nm nodes with model-based scattering bars using IML technology

Stephen Hsu, Robert Socha, Michael Hsu, 2004, SPIE Advanced Lithography.