L.A. Ragnarsson

High performing 8 A EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown (SPER) junctions

S. De Gendt, S. Severi, G. Groeseneken, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Degradation and breakdown of 0.9 nm EOT SiO/sub 2/ ALD HfO/sub 2/metal gate stacks under positive constant voltage stress

S. De Gendt, R. Degraeve, B. Kaczer, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..