Joachim Wurfl

Highly robust X-band LNA with extremely short recovery time

Christian Wipf, Wolfgang Heinrich, Armin Liero, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

Enabling GaN high speed devices: Microwave meets power electronics - And vice versa

Olof Bengtsson, Andreas Wentzel, Wolfgang Heinrich, 2013, 2013 European Microwave Integrated Circuit Conference.

MMIC GaN power amplifier with bidirectional operation for RF-to-DC conversion

Daniel Belo, Nuno B. Carvalho, Wonhoon Jang, 2016, 2016 IEEE MTT-S International Wireless Symposium (IWS).

VSWR testing of RF-power GaN transistors

Olof Bengtsson, Wolfgang Heinrich, Joachim Wurfl, 2014, 2014 9th European Microwave Integrated Circuit Conference.

Self-Heating in GaN Transistors Designed for High-Power Operation

Dionyz Pogany, Gottfried Strasser, Frank Brunner, 2014, IEEE Transactions on Electron Devices.

Influence of GaN cap on robustness of AlGaN/GaN HEMTs

Christian Boit, Joachim Wurfl, Arkadiusz Glowacki, 2009, 2009 IEEE International Reliability Physics Symposium.

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$

Frank Brunner, Joachim Wurfl, Eldad Bahat-Treidel, 2010, IEEE Transactions on Electron Devices.

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Frank Brunner, Joachim Wurfl, Arne Knauer, 2013, IEEE Transactions on Electron Devices.

70 mΩ/600 V normally-off GaN transistors on SiC and Si substrates

Frank Brunner, Sibylle Dieckerhoff, Joachim Wurfl, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).