Sayak Dutta Gupta

发表

ESD Behavior of AlGaN/GaN Schottky Diodes

Mayank Shrivastava, Ankit Soni, Bhawani Shankar, 2019, IEEE Transactions on Device and Materials Reliability.

Trap Assisted Stress Induced ESD Reliability of GaN Schottky Diodes

M. Shrivastava, H. Gossner, S. Raghavan, 2018, 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).

Silicon-based core–shell nanostructures

Mallar Ray, Sayak Dutta Gupta, A. Hazra, 2017 .

Determination of window thickness for efficient microwave injection into ECR plasma

Sayak Dutta Gupta, Samit Karmakar, Tuhin Kumar Das, 2016, 2016 IEEE 7th Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON).

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

Rajarshi Roy Chaudhuri, M. Shrivastava, Vipin Joshi, 2022, IEEE Transactions on Electron Devices.

On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

Rajarshi Roy Chaudhuri, M. Shrivastava, Vipin Joshi, 2021, IEEE Transactions on Electron Devices.

On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs

Srinivasan Raghavan, Mayank Shrivastava, Ankit Soni, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Unique Dependence of the Breakdown Behavior of Normally-OFF Cascode AlGaN/GaN HEMTs on Carrier Transport Through the Carbon-Doped GaN Buffer

Rajarshi Roy Chaudhuri, M. Shrivastava, Vipin Joshi, 2023, IEEE International Reliability Physics Symposium.

Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs

Rajarshi Roy Chaudhuri, M. Shrivastava, Vipin Joshi, 2021, IEEE Transactions on Electron Devices.

Unique Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-doped GaN Buffer and its Reliability Consequences

Rajarshi Roy Chaudhuri, M. Shrivastava, Vipin Joshi, 2023, 2023 IEEE International Reliability Physics Symposium (IRPS).

Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic Ron Behavior in AlGaN/GaN HEMTs—Part I

M. Shrivastava, Vipin Joshi, Amratansh Gupta, 2023, IEEE Transactions on Electron Devices.

On the Root Cause of Dynamic ON Resistance Behavior in AlGaN/GaN HEMTs

Sayak Dutta Gupta, Mayank Shrivastava, Vipin Joshi, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities

Mayank Shrivastava, Bhawani Shankar, Sayak Dutta Gupta, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).