D. Peftitsis

Low-Loss High-Performance Base-Drive Unit for SiC BJTs

J. Rabkowski, G. Tolstoy, D. Peftitsis, 2012, IEEE Transactions on Power Electronics.

Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply

J. Rabkowski, D. Peftitsis, H-P Nee, 2013, IEEE Transactions on Power Electronics.

Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated

J. Rabkowski, D. Peftitsis, H. Nee, 2012, IEEE Industrial Electronics Magazine.

A 6kW, 200kHz boost converter with parallel-connected SiC bipolar transistors

J. Rabkowski, M. Zdanowski, D. Peftitsis, 2013, 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

Challenges Regarding Parallel Connection of SiC JFETs

J. Rabkowski, G. Tolstoy, D. Peftitsis, 2011, IEEE Transactions on Power Electronics.

Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5%

J. Rabkowski, D. Peftitsis, H.-P Nee, 2012, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).