Hyo-Hoon Park

发表

Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer

Jaejin Lee, H. Chu, B. Yoo, 1997 .

Microstructural degradation during Zn diffusion in a GaInAsP/InP heterostructure: Layer mixing, misfit dislocation generation, and Zn3P2 precipitation

Jeong Yong Lee, Soon-Ku Hong, E. Lee, 1992 .

Low threshold current density InGaAs surface-emitting lasers with periodic gain active structure

Hyo-Hoon Park, B. Yoo, Eh Lee, 1994 .

Stable transverse mode emission in vertical-cavity surface-emitting lasers antiguided by amorphous GaAs layer

H. Chu, E. Lee, Hyo-Hoon Park, 1996 .

Zn diffusion enhancement of interdiffusion in a GaInAsP‐InP heterostructure

Y. T. Lee, Hyo-Hoon Park, O’Dae Kwon, 1988 .

Strain relaxation via interface nucleation of misfit dislocations in intermixing layers

Soon-Ku Hong, E. Lee, Jung Kee Lee, 1992 .

Effect of stress sign and film thickness on interface nucleation of misfit dislocations in strained multilayers

D. Oh, Hyo-Hoon Park, Ji-Beom Yoo, 1994 .

Low threshold current density and high efficiency surface-emitting lasers with a periodic gain active structure

Hyo-Hoon Park Park, Byueng-Su Yoo, B. Yoo, 1995 .

Polarization control of vertical-cavity surface-emitting lasers by electro-optic birefringence

Connie J. Chang-Hasnain, Hye Yong Chu, Byueng-Su Yoo, 2000 .