Hyun-Chul Sagong

A systematic study of gate dielectric TDDB in FinFET technology

Hyunjin Kim, Minjung Jin, Hyun-Chul Sagong, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Simple S/D Series Resistance Extraction Method Optimized for Nanowire FETs

Sungho Kim, Yoon-Ha Jeong, Dong-Won Kim, 2013, IEEE Electron Device Letters.

Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI

Hoyoung Kang, Hyun-Chul Sagong, Junekyun Park, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology

Hyunjin Kim, Tae-Young Jeong, Hyun-Chul Sagong, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Systematical study of 14nm FinFET reliability: From device level stress to product HTOL

Hyunjin Kim, Hyunwoo Lee, Yoohwan Kim, 2015, 2015 IEEE International Reliability Physics Symposium.

Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit

Seungbae Lee, Taiki Uemura, Soonyoung Lee, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).