T. Zhang

Bias Dependence of the Electrical Spin Injection into GaAs from Co − Fe − B / MgO Injectors with Different MgO Growth Processes

J. George, H. Jaffrès, S. Mangin, 2017 .

Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering

Y. Li, X. Pan, D. Schlom, 2018, Nature Communications.

Fabrication of an InGaAs spin filter by implantation of paramagnetic centers

C. T. Nguyen, S. Mazzucato, A. Balocchi, 2013, 1309.3434.

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

S. Mazzucato, P. Boonpeng, A. Balocchi, 2013 .

L-valley electron spin dynamics in GaAs

C. T. Nguyen, A. Balocchi, X. Marie, 2012, 1207.5978.

Epitaxial growth and electronic structure of Ruddlesden–Popper nickelates (Lan+1NinO3n+1, n = 1–5)

J. H. Song, Y. Nie, T. Zhang, 2020, APL Materials.