C. Chu

发表

F2, H2O, and O2 etching rates of diamond and the effects of F2, HF and H2O on the molecular O2 etching of (110) diamond

R. Hauge, J. Margrave, C. Chu, 1995 .

Growth kinetics of (100), (110), and (111) homoepitaxial diamond films

R. Hauge, J. Margrave, M. D'evelyn, 1992 .

Nanometer‐scale morphology of homoepitaxial diamond films by atomic force microscopy

R. Hauge, J. Margrave, M. D'evelyn, 1992 .

Atomic force microscopy of (100), (110), and (111) homoepitaxial diamond films

R. Hauge, J. Margrave, M. D'evelyn, 1992 .

Matrix-Isolation Studies of the Reactions of Ground- and Excited-State Atomic Iron with Cyclopropane

W. E. Billups, Z. Kafafi, J. Margrave, 2000 .

Mechanism of diamond growth by chemical vapor deposition on diamond (100), (111), and (110) surfaces: Carbon‐13 studies

R. Hauge, J. Margrave, M. D'evelyn, 1991 .

Chlorine‐Activated Diamond Chemical Vapor Deposition

R. Hauge, J. Margrave, C. Chu, 1994 .

Mechanism of diamond film growth by hot-filament CVD: Carbon-13 studies

R. Hauge, J. Margrave, M. D'evelyn, 1990 .

Studies of Diamond Growth Mechanisms in a Hot Filament Reactor

R. Hauge, J. Margrave, M. D'evelyn, 1989 .

Atomization and Mixing Characteristics of an Unlike-Doublet Impinging-Jet

Wei-Hsiang Lai, C. J. Chu, W. Huang, 2004 .