M. Boukerche

发表

Molecular beam epitaxial growth and characterization of HgCdTe, HgZnTe, and HgMnTe on GaAs(100)

J. Reno, S. Sivananthan, P. Wijewarnasuriya, 1986 .

The doping of mercury cadmium telluride grown by molecular‐beam epitaxy

S. Sivananthan, P. Wijewarnasuriya, Mi-Yeon Kim, 1988 .

Electrical properties of intrinsic p‐type shallow levels in HgCdTe grown by molecular‐beam epitaxy in the (111)B orientation

S. Sivananthan, P. Wijewarnasuriya, I. Sou, 1989 .

Minority‐carrier lifetime in p‐type (111)B HgCdTe grown by molecular‐beam epitaxy

J. Faurie, M. Boukerche, M. E. D. Souza, 1990 .

HgTe/CdTe superlattices grown by molecular beam epitaxy

J. Reno, S. Sivananthan, J. Faurie, 1985 .

HgTe-CdTe superlattices as a new infrared material

J. Reno, I. Sou, J. Faurie, 1986 .

Recent Advances in Co-Processed APIs and Proposals for Enabling Commercialization of These Transformative Technologies.

Luke Schenck, Changquan Calvin Sun, Joseph Bullard, 2020, Molecular pharmaceutics.

Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100)

S. Sivananthan, Robert Sporken, M. Boukerche, 1989 .

Molecular beam epitaxial growth and characterization of Cd1−xZnxTe, Hg1−xCdxTe, Hg1−xMnxTe, and Hg1−xZnxTe on GaAs(100)

J. Reno, S. Sivananthan, P. Wijewarnasuriya, 1986 .

Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy

P. Wijewarnasuriya, I. Sou, J. Faurie, 1989 .

Multiscale Experimental Study and Modeling of l-Glutamic acid Crystallization: Emphasis on a Kinetic Explanation of the Ostwald Rule of Stages

N. Candoni, S. Veesler, É. Gagnière, 2019, Crystal Growth & Design.

Growth of Hg1−xZnxTe by molecular beam epitaxy on a GaAs(100) substrate

S. Sivananthan, J. Faurie, X. Chu, 1985 .

High‐quality p‐type HgCdTe grown by molecular beam epitaxy

Jean-Pierre Faurie, P. S. Wijewarnasuriya, M. Boukerche, 1990 .

An investigation of the kinetics and thermodynamics of NaCl nucleation through composite clusters

D. Corti, D. Ramkrishna, N. Nere, 2022, PNAS nexus.

Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substrates

J. Reno, S. Sivananthan, J. Faurie, 1984 .

Mercury cadmium telluride junctions grown in situ by molecular-beam epitaxy

I. Sou, S. Yoo, J. Faurie, 1988 .

Hall and electroreflectance studies of the effects of doping in mercury–cadmium telluride grown by molecular‐beam epitaxy

P. M. Raccah, Z. Zhang, J. Reno, 1986 .

Indium doping of HgCdTe layers during growth by molecular beam epitaxy

J. Reno, I. Sou, J. Faurie, 1986 .

Electrical properties of molecular beam epitaxy produced HgCdTe layers doped during growth

J. Reno, P. Wijewarnasuriya, I. Sou, 1986 .

Inducing the stable polymorph using heterogeneous primary nucleation

D. Mangin, J. Klein, C. Hoff, 2010 .

MERCURY CADMIUM TELLURIDE N-ISOTYPE HETEROJUNCTIONS GROWN INSITU BY MOLECULAR-BEAM EPITAXY

I. Sou, S. Yoo, J. Faurie, 1987 .

Small-Volume Continuous Manufacturing of Merestinib. Part 1. Process Development and Demonstration

Martin D. Johnson, John R. Howell, Moussa Boukerche, 2019, Organic Process Research & Development.

II–VI semiconductor compounds: New superlattice systems for the future?

J. Reno, J. Faurie, M. Boukerche, 1985 .