S. Shaimeev

发表

Wigner crystallization due to electrons localized at deep traps in two-dimensional amorphous dielectric

H. Wong, V. Gritsenko, S. Shaimeev, 2010 .

Electron and hole injection in metal-oxide-nitride-oxide-silicon structures

J. Han, V. Gritsenko, K. Nasyrov, 2006 .

Wigner crystallization of electrons in deep traps in a two-dimensional dielectric

V. Gritsenko, S. Shaimeev, 2011 .

Electronic structure and charge transport properties of amorphous Ta2O5 films

Hei Wong, V. V. Atuchin, V. A. Shvets, 2008 .

DLTS study of nucleation stage of oxygen precipitate in silicon

V. Popov, I. Antonova, S. Shaimeev, 1998 .

Formation of oxygen precipitates in silicon

V. Popov, I. Antonova, A. Misiuk, 1997 .

Removal of Electrically Active Defects in Silicon by 340 MeV Xe ion Bombardment

A. Dvurechenskii, I. Antonova, H. Klose, 1995 .

Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions

I. Antonova, S. Smagulova, S. Shaimeev, 2006 .

DLTS study of oxygen precipitates in silicon annealed at high pressure

V. Popov, I. Antonova, A. Misiuk, 1996 .

A DLTS study of the evolution of oxygen precipitates in Si at high temperature and high pressure

V. Popov, I. Antonova, A. Misiuk, 1996 .

Two-band conduction in TiO2

V. Atuchin, O. Pchelyakov, V. Gritsenko, 2006 .

Phonon-coupled trap-assisted charge injection in metal-nitride-oxide-silicon/silicon-oxide-nitride-oxide-silicon structures

J. Han, V. Gritsenko, K. Nasyrov, 2009 .

Trap-assisted tunneling hole injection in SiO2: Experiment and theory

K. A. Nasyrov, Vladimir A. Gritsenko, V. Gritsenko, 2009 .

Atomic and electronic structures of amorphous ZrO2 and HfO2 films

Jae-Hoon Lee, H. Wong, V. Tapilin, 2005 .

Single Band Electronic Conduction in Hafnium Oxide Prepared by Atomic Layer Deposition

Hei Wong, Chungwoo Kim, Kaupo Kukli, 2005, 2005 IEEE Conference on Electron Devices and Solid-State Circuits.