I. Kolevatov

In-circuit current measurements with a frequency above 1 MHz: a shunt based on active components

T. Sorsdal, I. Kolevatov, B. Karlsen, 2020, 2020 Conference on Precision Electromagnetic Measurements (CPEM).

Dominant defects and carrier transport in single crystalline cuprous oxide: A new attribution of optical transitions

E. Monakhov, G. C. Vásquez, K. Bergum, 2021, Journal of Applied Physics.

Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy

B. Fimland, E. Monakhov, L. Vines, 2017 .

Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon

B. Svensson, P. Weiser, E. Monakhov, 2018, physica status solidi (a).

Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers

Yaping Dan, A. Mesli, E. Monakhov, 2020 .

Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

B. Svensson, E. Monakhov, I. Kolevatov, 2015 .

Oxygen-related defects: minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application

V. Osinniy, O. Vyvenko, V. Kveder, 2015 .

The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms

V. Markevich, A. Peaker, S. Lastovskii, 2017 .

Correlated annealing and formation of vacancy-hydrogen related complexes in silicon

B. Svensson, E. Monakhov, I. Kolevatov, 2019, Journal of physics. Condensed matter : an Institute of Physics journal.

Interaction between the divacancy and hydrogen in silicon: Observation of fast and slow kinetics

B. Svensson, E. Monakhov, I. Kolevatov, 2018 .