Haizheng Song

发表

Kinetic Analysis of InAsP by Metalorganic Vapor Phase Epitaxy Selective Area Growth Technique

Y. Shimogaki, Y. Nakano, M. Sugiyama, 2009 .

Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique

Y. Shimogaki, Y. Nakano, M. Sugiyama, 2008 .

Effects of Zn- and S-Doping on Kinetics of GaAs Selective Area MOVPE

Y. Shimogaki, Y. Nakano, M. Sugiyama, 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism

Y. Shimogaki, Y. Nakano, I. Im, 2007 .

Reactor-scale uniformity of selective-area performance in InGaAsP system

Y. Shimogaki, Y. Nakano, M. Sugiyama, 2007 .

Effect of Surface Misorientation on the Kinetics of GaAs MOVPE Examined Using Selective Area Growth

Y. Shimogaki, Y. Nakano, M. Sugiyama, 2006 .

Effect of temperature and substrate misorientation on the surface reaction kinetics of selective area MOVPE

Y. Shimogaki, Y. Nakano, M. Sugiyama, 2005, International Conference on Indium Phosphide and Related Materials, 2005.

CsPbBr3 perovskite quantum dots/ZnO inverse opal electrodes: photoelectrochemical sensing for dihydronicotinamide adenine dinucleotide under visible irradiation.

Yongsheng Zhu, D. Qiu, Zhiwen Lu, 2018, Dalton transactions.

Impact of Atomistic Surface Structure on Macroscopic Surface Reaction Rate in MOVPE of GaAs

Y. Shimogaki, Y. Nakano, M. Sugiyama, 2007 .

Effect of group V partial pressure on the kinetics of selective area MOVPE for GaAs on (100) exact and misoriented substrate

Y. Shimogaki, Y. Nakano, M. Sugiyama, 2006 .

Samarium doping improves luminescence efficiency of Cs3Bi2Br9 perovskite quantum dots enabling efficient white light-emitting diodes

Yongsheng Zhu, Jinyang Zhu, Gencai Pan, 2020 .

Trade-Off between Parasitic Deposition and SiC Homoepitaxial Growth Rate Using Halogenated Si-Precursors

T. Sudarshan, M. Chandrashekhar, T. Rana, 2013 .

Formation and Rate Processes of Y2O3 Stabilized ZrO2 Thin Films from Zr ( DPM ) 4 and Y ( DPM ) 3 by Cold-Wall Aerosol-Assisted MOCVD

G. Meng, Yinzhu Jiang, Jian-feng Gao, 2005 .

Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor

T. Sudarshan, M. Chandrashekhar, Haizheng Song, 2015 .

Study of Surface Morphology, Impurity Incorporation and Defect Generation during Homoepitaxial Growth of 4H-SiC Using Dichlorosilane

T. Sudarshan, M. Chandrashekhar, Haizheng Song, 2015 .

Basal Plane Dislocation Mitigation in SiC Epitaxial Growth by Nondestructive Substrate Treatment

T. Sudarshan, Haizheng Song, 2012 .

Application of novel aerosol-assisted chemical vapor deposition techniques for SOFC thin films

G. Meng, Q. Dong, D. Peng, 2004 .

Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth

M. Skowronski, T. Sudarshan, Y. Picard, 2015 .

Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4° off-axis 4H–SiC

T. Sudarshan, Haizheng Song, 2013 .

Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers

T. Sudarshan, T. Rana, Haizheng Song, 2011 .

Progress in ion-transport inorganic membranes by novel chemical vapor deposition (CVD) techniques

G. Meng, C. Xia, D. Peng, 2002 .

Aerosol-assisted MOCVD deposition of YDC thin films on (NiO + YDC) substrates

G. Meng, C. Xia, D. Peng, 2000 .

Synthesis and characterization of Sm(DPM)3 used as precursor for MOCVD

G. Meng, Yinzhu Jiang, Ling-Li Li, 2004 .

Aerosol-assisted MOCVD growth of Gd2O3-doped CeO2 thin SOFC electrolyte film on anode substrate

G. Meng, S. Zha, D. Peng, 2003 .

Non-linear surface reaction kinetics in GaAs selective area MOVPE

Y. Shimogaki, Y. Nakano, M. Sugiyama, 2008 .

Nonlinear Kinetics of GaAs MOVPE Examined by Selective Area Growth Technique

Yoshiaki Nakano, Masakazu Sugiyama, Yukihiro Shimogaki, 2007 .

Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model

T. Sudarshan, M. Chandrashekhar, T. Rana, 2014 .

Study of SiC Epitaxial Growth Using Tetrafluorosilane and Dichlorosilane in Vertical Hotwall CVD Furnace

T. Sudarshan, M. Chandrashekhar, S. Shetu, 2015 .

Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases

T. Sudarshan, M. Chandrashekhar, T. Rana, 2012 .

In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane and Propane as Precursors

T. Sudarshan, M. Chandrashekhar, T. Rana, 2012 .

Room Temperature Photoluminescence from 4H-SiC Epilayers: Non-Destructive Estimation of In-Grown Stacking Fault Density

T. Sudarshan, M. Chandrashekhar, Haizheng Song, 2012 .

4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth

T. Sudarshan, M. Chandrashekhar, Haizheng Song, 2016 .

Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy

M. Skowronski, V. Wheeler, R. Myers-Ward, 2013 .

Comparison of SiC Epitaxial Growth from Dichlorosilane and Tetrafluorosilane Precursors

T. Sudarshan, M. Chandrashekhar, T. Rana, 2013 .

Nonlinear Kinetic Analysis of InP and InAs Metal Organic Vapor Phase Epitaxy by Selective Area Growth Technique

Y. Shimogaki, Y. Nakano, M. Sugiyama, 2008 .

Deposition of Y2O3 stabilized ZrO2 thin films from Zr(DPM)4 and Y(DPM)3 by aerosol-assisted MOCVD

G. Meng, Yinzhu Jiang, C. Xia, 2003 .

Deposition of Sm2O3 doped CeO2 thin films from Ce(DPM)4 and Sm(DPM)3 (DPM=2,2,6,6-tetramethyl-3,5-heptanedionato) by aerosol-assisted metal–organic chemical vapor deposition

Q. Ma, G. Meng, Yinzhu Jiang, 2006 .

Preparation of Gd2O3 doped CeO2 thin films by oxy-acetylene combustion assisted aerosol-chemical vapor deposition technique on various substrates and zone model for microstructure

G. Meng, C. Xia, D. Peng, 2003 .

Evaluation of a novel unfluorinated copper precursor for chemical vapor deposition

Y. Shimogaki, Haizheng Song, J. Norman, 2010 .

Decomposition behavior of M(DPM)n (DPM = 2,2,6,6-tetramethyl-3,5-heptanedionato; n = 2, 3, 4).

G. Meng, Yinzhu Jiang, Jian-feng Gao, 2006, The journal of physical chemistry. A.

A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases

T. Sudarshan, M. Chandrashekhar, T. Rana, 2012, 1208.6018.

Control of abnormal edge growth in selective area MOVPE of InP

Yoshiaki Nakano, Taro Arakawa, Masakazu Sugiyama, 2006 .

Interface Trap-Induced Nonideality in As-Deposited Ni/4H-SiC Schottky Barrier Diode

T. Sudarshan, M. Chandrashekhar, T. Rana, 2015, IEEE Transactions on Electron Devices.

Novel CVD Techniques for Micro‐ and IT‐SOFC Fabrication

G. Meng, Xing-qin Liu, C. Xia, 2004 .

Behavior of Particles in the Growth Reactor and their Effect on Silicon Carbide Epitaxial Growth

T. Sudarshan, M. Chandrashekhar, T. Rana, 2012 .