C. Beyler

发表

Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition

P. Dapkus, K. Dzurko, J. Osinski, 1989 .

GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy

S. Denbaars, P. Dapkus, A. Hariz, 1987 .

Atomic layer epitaxy for the growth of heterostructure devices

S. Denbaars, P. Dapkus, K. Dzurko, 1988 .

Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substrates

P. Dapkus, K. Dzurko, J. Osinski, 1989 .

Small dimension Bragg reflectors formed by air-isolated GaAs layers

P. Dapkus, N. Frateschi, S. Hummel, 1991 .

The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy

S. Denbaars, P. Dapkus, A. Hariz, 1987 .

Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasers

P. Dapkus, P. Grodzinski, S. Hummel, 1990 .

Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration

P. Dapkus, J. Coleman, J. Osinski, 1991 .

Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structure substrates

P. Dapkus, N. Frateschi, P.D. Dapkus, 1992, IEEE Photonics Technology Letters.

Use of tertiarybutylarsine in atomic layer epitaxy and laser‐assisted atomic layer epitaxy of device quality GaAs

P. Dapkus, J. Coleman, C. Beyler, 1992 .