Maocheng Shan

发表

Enhanced Heat Dissipation of Phosphor Film in WLEDs by AlN-Coated Sapphire Plate

Yang Peng, Hao Wang, Haiding Sun, 2020, IEEE Transactions on Electron Devices.

High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD

H. Kuo, Z. Feng, J. Dai, 2019, Applied Physics Letters.

Fast growth of high quality AlN films on sapphire using a dislocation filtering layer for ultraviolet light-emitting diodes

J. Dai, Changqin Chen, Yi Zhang, 2019, CrystEngComm.

Full wafer scale electroluminescence properties of AlGaN-based deep ultraviolet LEDs with different well widths.

Feng Wu, J. Dai, Changqin Chen, 2021, Optics letters.

Deep UV Laser at 249 nm Based on GaN Quantum Wells

Jichun Ye, Xiaohang Li, J. Dai, 2019, ACS Photonics.

Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization

Xiaohang Li, Feng Wu, Wei Guo, 2021 .

Enhanced light extraction efficiency via double nano-pattern arrays for high-efficiency deep UV LEDs

Renli Liang, Xiaohang Li, J. Dai, 2021 .

Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer

J. Dai, Changqin Chen, Yi Zhang, 2019, Nanoscale Research Letters.

Fabrication of wafer-scale nanoporous AlGaN-based deep ultraviolet distributed Bragg reflectors via one-step selective wet etching

Feng Wu, J. Dai, Changqin Chen, 2022, Scientific Reports.

Nanoporous AlGaN Distributed Bragg Reflectors for Deep Ultraviolet Emission

Feng Wu, Chenyu Guo, Wei Guo, 2022, ACS Applied Nano Materials.