Erfan Abbasian

发表

A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology

M. Gholipour, S. Birla, Erfan Abbasian, 2021, Silicon.

Design and investigation of stability‐ and power‐improved 11T SRAM cell for low‐power devices

S. Birla, Erfan Abbasian, Emad Mojaveri Moslem, 2022, Int. J. Circuit Theory Appl..

A low‐leakage single‐bitline 9T SRAM cell with read‐disturbance removal and high writability for low‐power biomedical applications

M. Gholipour, Erfan Abbasian, 2022, Int. J. Circuit Theory Appl..

A variation-aware design for storage cells using Schottky-barrier-type GNRFETs

M. Gholipour, Erfan Abbasian, 2020 .

A variation-aware design for storage cells using Schottky-barrier-type GNRFETs

M. Gholipour, Erfan Abbasian, 2020, Journal of Computational Electronics.

A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins

M. Gholipour, Erfan Abbasian, Farzaneh Izadinasab, 2022, IEEE Transactions on Circuits and Systems I: Regular Papers.

Design of a Schmitt-Trigger-Based 7T SRAM cell for variation resilient Low-Energy consumption and reliable internet of things applications

Morteza Gholipour, Erfan Abbasian, M. Gholipour, 2021, AEU - International Journal of Electronics and Communications.

Single‐ended half‐select disturb‐free 11T static random access memory cell for reliable and low power applications

Morteza Gholipour, Erfan Abbasian, M. Gholipour, 2021, Int. J. Circuit Theory Appl..

An Efficient GNRFET-based Circuit Design of Ternary Half-Adder

S. Birla, Erfan Abbasian, Maedeh Orouji, 2023, AEU - International Journal of Electronics and Communications.

Simulation-Based Recommendations for Digital Circuits Design Using Schottky-Barrier-Type GNRFET

M. Nayeri, Erfan Abbasian, 2022, ECS Journal of Solid State Science and Technology.

Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design

Morteza Gholipour, Erfan Abbasian, Farzaneh Izadinasab, 2021, Int. J. Circuit Theory Appl..

GNRFET- and CNTFET-Based Designs of Highly Efficient 22 T Unbalanced Single-Trit Ternary Multiplier Cell

Erfan Abbasian, Alireza Aminzadeh, Sana Taghipour Anvari, 2023, Arabian Journal for Science and Engineering.

A Comprehensive Analysis of Different SRAM Cell Topologies in 7-nm FinFET Technology

Shilpi Birla, Morteza Gholipour, Erfan Abbasian, 2021, Silicon.

A High-Performance and Energy-Efficient Ternary Multiplier Using CNTFETs

Erfan Abbasian, Sobhan Sofimowloodi, 2023, Arabian Journal for Science and Engineering.

A Stable Low Leakage Power SRAM with Built-In Read/Write-Assist Scheme using GNRFETs for IoT Applications

Erfan Abbasian, Sobhan Sofimowloodi, Tahere Mirzaei, 2022, ECS Journal of Solid State Science and Technology.

A low-power SRAM design with enhanced stability and ION/IOFF ratio in FinFET technology for wearable device applications

Ashish Sachdeva, S. Birla, Erfan Abbasian, 2023, International Journal of Electronics.

Energy-Efficient Single-Ended Read/Write 10T Near-Threshold SRAM

Erfan Abbasian, Sobhan Sofimowloodi, 2023, IEEE Transactions on Circuits and Systems I: Regular Papers.

A Single-Bitline 9T SRAM for Low-Power Near-Threshold Operation in FinFET Technology

M. Gholipour, S. Birla, Erfan Abbasian, 2022, Arabian Journal for Science and Engineering.

A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs

M. Gholipour, S. Birla, Erfan Abbasian, 2022, Analog Integrated Circuits and Signal Processing.

A Highly Stable Low-Energy 10T SRAM for Near-Threshold Operation

Erfan Abbasian, 2022, IEEE Transactions on Circuits and Systems I: Regular Papers.

A robust multi-bit soft-error immune SRAM cell for low-power applications

Erfan Abbasian, Sobhan Sofimowloodi, 2023, Analog Integrated Circuits and Signal Processing.

FinFET-based 11T sub-threshold SRAM with improved stability and power

S. Birla, Erfan Abbasian, Sobhan Sofimowloodi, 2022, International Journal of Electronics.

A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time

Ashish Sachdeva, Erfan Abbasian, Deepak Kumar, 2023, AEU - International Journal of Electronics and Communications.

Design of high stability, low power and high speed 12T SRAM cell in 32-nm CNTFET technology

Erfan Abbasian, Muthukumaran Gunasegeran, Sobhan Sofimowloodi, 2022, AEU - International Journal of Electronics and Communications.

Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications

M. Gholipour, Erfan Abbasian, 2022, Circuits, Systems, and Signal Processing.

A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology

M. Gholipour, M. Sahid, Mehrzad Karamimanesh, 2022, Circuits, Systems, and Signal Processing.

Improved read/write assist mechanism for 10‐transistor static random access memory cell

M. Gholipour, Erfan Abbasian, 2022, Int. J. Circuit Theory Appl..

Robust transmission gate-based 10T subthreshold SRAM for internet-of-things applications

M. Gholipour, Erfan Abbasian, 2022, Semiconductor Science and Technology.

Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM

M. Gholipour, S. Birla, Erfan Abbasian, 2022, Microelectron. J..

Correction: A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs

M. Gholipour, S. Birla, Erfan Abbasian, 2022, Analog Integrated Circuits and Signal Processing.

An ultra‐low power and energy‐efficient ternary Half‐Adder based on unary operators and two ternary 3:1 multiplexers in 32‐nm GNRFET technology

Erfan Abbasian, Maedeh Orouji, Sana Taghipour Anvari, 2023, International Journal of Circuit Theory and Applications.

Design of a 10-nm FinFET 11 T Near-Threshold SRAM Cell for Low-Energy Internet-of-Things Applications

Mahdieh Nayeri, Erfan Abbasian, Bahare Grailoo, 2022, Circuits, systems, and signal processing.

Correction: A 9T high-stable and Low-Energy Half-Select-Free SRAM Cell Design using TMDFETs

M. Gholipour, S. Birla, Erfan Abbasian, 2022, Analog Integrated Circuits and Signal Processing.

A sub-threshold 10T FinFET SRAM cell design for low-power applications

M. Nayeri, Erfan Abbasian, Sobhan Sofimowloodi, 2022, AEU - International Journal of Electronics and Communications.

Tri-state GNRFET-based fast and energy-efficient ternary multiplier

Erfan Abbasian, Tabassum Khurshid, Shams ul Haq, 2024, AEU - International Journal of Electronics and Communications.

A highly-efficient ternary-capable GNRFETs-based three-valued half adder circuit using unary operators

Erfan Abbasian, Ahmed Elbarbary, 2024, Materials Science and Engineering: B.

Energy-Efficient High-Speed Dynamic Logic-based One-Trit Multiplier in CNTFET Technology

Erfan Abbasian, Tabassum Khurshid, Shams ul Haq, 2023, AEU - International Journal of Electronics and Communications.