G. Cong

发表

Crack-free GaN/Si(1 1 1) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition

J. Li, Hongyuan Wei, X. Han, 2005 .

Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates

Liping Guo, J. Li, Hongyuan Wei, 2006 .

Optical and magnetic properties of ZnS nanoparticles doped with Mn2

W. Peng, S. Qu, Z. Wang, 2005 .

Aluminium doping induced enhancement of p–d coupling in ZnO

Z. G. Wang, W. Peng, Z. Ye, 2006 .

Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

Xiaohui Wang, Zhan-guo Wang, Qinsheng Zhu, 2004 .

Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs

N. Kumagai, M. Shimizu, Tokio Takahashi, 2019, Journal of Crystal Growth.

One-step growth of ZnO from film to vertically well-aligned nanorods and the morphology-dependent Raman scattering

Z. G. Wang, W. Peng, Jiejun Wu, 2005 .

Synthesis and photoluminescence of ZnS:Cu nanoparticles

W. Peng, Z. Wang, S. Qu, 2006 .

InN nanoflowers grown by metal organic chemical vapor deposition

Weiguo Hu, Qinsheng Zhu, Riqing Zhang, 2006 .

Comparison of valence band x-ray photoelectron spectrum between Al–N-codoped and N-doped ZnO films

Z. G. Wang, Z. Ye, W. Peng, 2006 .

Structural and Optical Investigation of Mn-Doped ZnS Nanocrystals

W. Peng, Wenqin Peng, S. Qu, 2005 .

High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: towards directional micro-LED in top-down structure

N. Kumagai, K. Endo, M. Shimizu, 2020, Semiconductor Science and Technology.

Concentration effect of Mn2+ on the photoluminescence of ZnS:Mn nanocrystals

Z. G. Wang, W. Peng, S. Qu, 2005 .

Structure and visible luminescence of ZnO nanoparticles

W. Peng, Z. Wang, G. Cong, 2006 .

Design of the low-temperature AlN interlayer for GaN grown on Si (111) substrate

Wenqin Peng, Xiaohui Wang, Wenqin Peng, 2005 .

Spin Injection and Relaxation in p -Doped (In,Ga)As/GaAs Quantum-Dot Spin Light-Emitting Diodes at Zero Magnetic Field

H. Jaffrès, J. George, Bowei Xu, 2020, Physical Review Applied.

Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field

H. Jaffrès, J. George, Bowei Xu, 2020, 2008.06407.

Intersubband optical absorption in quantum dots-in-a-well heterostructures

Qinsheng Zhu, Jiejun Wu, X. F. Han, 2005 .

Synthesis and Structures of Morphology-Controlled ZnO Nano- and Microcrystals

Wenqin Peng, S. Qu, Zhanguo Wang, 2006 .

Synthesis of shuttle-like ZnO nanostructures from precursor ZnS nanoparticles

W. Peng, Z. Wang, S. Qu, 2005 .

Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

Liping Guo, J. Li, Hongyuan Wei, 2006 .

Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

Dabing Li, Xiaohui Wang, Dabing Li, 2004 .

Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition

Hongyuan Wei, Weiguo Hu, Qinsheng Zhu, 2008 .

Synthesis and temperature-dependent near-band-edge emission of chain-like Mg-doped ZnO nanoparticles

W. Peng, Z. Wang, S. Qu, 2006 .