A. Reiher

发表

Gallium-nitride-based devices on silicon

A. Strittmatter, J. Bläsing, E. Kohn, 2003 .

MOVPE growth of GaN on Si(1 1 1) substrates

E. Kohn, Fernando Ponce, Jürgen Christen, 2003 .

Depth-resolving structural analysis of GaN layers by skew angle x-ray diffraction

J. Bläsing, A. Dadgar, A. Krost, 2004 .

Spatial control of the energy metabolism of yeast cells through electrolytic generation of oxygen

A. Krost, T. Mair, M. Hauser, 2009, Physical biology.

In vitro stimulation of neurons by a planar Ti-Au-electrode interface

T. Voigt, A. Krost, A. Krtschil, 2005 .

The origin of stress reduction by low-temperature AlN interlayers

Armin Dadgar, A. Diez, Alois Krost, 2002 .

Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon

Peter Veit, Mathias Schubert, Dieter Bimberg, 2003 .

Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers

Armin Dadgar, A. Diez, Alois Krost, 2003 .

Reduction of stress at the initial stages of GaN growth on Si(111)

J. Bläsing, A. Dadgar, A. Krost, 2003 .