S. Zamir

发表

Microstructure of GaN deposited by lateral confined epitaxy on patterned Si (111)

Feng Wu, Y. Golan, J. Salzman, 2002 .

Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire

Feng Wu, Y. Golan, J. Salzman, 2003 .

The Influence of Cation Additives on Grain‐Boundary Mobility in Yttrium Aluminum Garnet (YAG)

S. Zamir, 2015 .

Coupled waveguides in GaN-based lasers

O. Skorka, J. Salzman, S. Zamir, 2003 .

Si segregation and its role in reaching transparent YAG

S. Zamir, 2017 .

GaN layer growth optimization for high power devices

O. Katz, J. Salzman, B. Meyler, 2001 .

The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD

Joseph Salzman, E. Zolotoyabko, J. Salzman, 2000 .

Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy

Joseph Salzman, J. Salzman, B. Meyler, 2001 .

Solubility limit of Si in YAG at 1700°C in vacuum

S. Zamir, 2017 .

Electrical isolation of GaN by ion implantation damage: Experiment and model

S. Prawer, R. Kalish, C. Uzan-Saguy, 1999 .

Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire

U. Tisch, M. Wei, E. Zolotoyabko, 2000 .

High-quality GaN on intentionally roughened c-sapphire

J. Speck, P. Fini, Y. Golan, 2003 .

Multiparameter Statistical Design of Experiments for GaN Growth Optimization

J. Salzman, B. Meyler, S. Zamir, 1999 .

Surface morphology of MOCVD-grown GaN on sapphire

U. Tisch, J. Salzman, S. Zamir, 1998, MELECON '98. 9th Mediterranean Electrotechnical Conference. Proceedings (Cat. No.98CH36056).

Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy

Joseph Salzman, J. Salzman, B. Meyler, 2002 .