Tackhwi Lee

发表

Device characteristics of HfON charge-trap layer nonvolatile memory

S. Banerjee, Tackhwi Lee, 2010 .

Device characterization and reliability of Dysprosium (Dy) incorporated HfO₂ CMOS devices and its application to high-k NAND flash memory

Tackhwi Lee, 2010 .

Metal gate- HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers

Jack C. Lee, Manhong Zhang, I. Ok, 2006 .

Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy/sub 2/O/sub 3/) into HfO/sub 2/ n-MOSFETs

Manhong Zhang, S. Krishnan, C. Kang, 2006, IEEE Electron Device Letters.

Improved MOSFET characteristics by Incorporating Laminated Dysprosium (Dy2O3) Dielectric into HfO2 Gate Stack

Jack C. Lee, Manhong Zhang, C. Kang, 2006, 2006 64th Device Research Conference.

Breakdown mechanism for the thin EOT Dy2O3/HfO2 dielectric

Jack C. Lee, S. Banerjee, S. Park, 2008, 2008 IEEE International Integrated Reliability Workshop Final Report.

Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer

Manhong Zhang, S. Krishnan, C. Kang, 2006, IEEE Electron Device Letters.

Aggressively scaled ultra thin undoped HfO/sub 2/ gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer

Se Jong Rhee, Manhong Zhang, J.C. Lee, 2005, IEEE Electron Device Letters.

Mechanism of VFB / VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices

S. Banerjee, T. Ando, M. Gribelyuk, 2011 .

Fabrication of TaN-gated ultra-thin MOSFETs (EOT <1.0 nm) with HfO/sub 2/ using a novel oxygen scavenging process for sub 65 nm application

Changhwan Choi, Chang Yong Kang, Se Jong Rhee, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Ultrathin HfO2 (equivalent oxide thickness=1.1 nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation

Jack C. Lee, Manhong Zhang, I. Ok, 2006 .