Chung-Wen Chen

Electrical Characteristics of Passivated Pseudomorphic HEMTs With $\hbox{P}_{\hbox{2}}\hbox{S}_{\hbox{5}}/(\hbox{NH}_{\hbox{4}})_{\hbox{2}}\hbox{S}_{\hbox{X}}$ Pretreatment

H. Chiu, Liann-Be Chang, Yuan-Chang Huang, 2008, IEEE Transactions on Electron Devices.

Electrical Characteristics of Passivated Pseudomorphic HEMTs With Pretreatment

H. Chiu, Liann-Be Chang, Yuan-Chang Huang, 2008 .

Improved Schottky Leakage Current of In0.5Al0.5As ∕ In0.5Ga0.5As Metamorphic HEMTs Using ( NH4 ) 2S x Treatment

H. Chiu, Y. Chan, Liann-Be Chang, 2006 .

Microwave Performance of Double $\delta$-Doped High Electron Mobility Transistor With Various Lower/Upper Planar-Doped Ratio Designs

H. Chiu, Yuan-Chang Huang, Chung-Wen Chen, 2008, IEEE Transactions on Electron Devices.